Speaker
Dr
Jaakko Haerkoenen
(Helsinki Institute of Physics HIP)
Description
N-type MCz-Si pad detectors have been irradiated by 9 MeV and 24 GeV/c protons up to 1x10^16 neff/cm^2 fluence. The samples have been characterized by Transient Current Technique (TCT) operating with 670nm laser and Charge Collection Efficiency (CCE) measurements performed by 1060nm IR laser. Low and high energy proton irradiation results are compared and charge collection of MCz-Si detectors is discussed.
Author
Dr
Jaakko Haerkoenen
(Helsinki Institute of Physics HIP)
Co-authors
Dr
Eija Tuominen
(Helsinki Institute of Physics HIP)
Mr
Esa Tuovinen
(Helsinki Institute of Physics HIP)
Dr
Panja Luukka
(Helsinki Institute of Physics HIP)
Dr
Sandor Czellar
(Helsinki Institute of Physics HIP)
