Speaker
Prof.
Pawel Kaminski
(Institute of Electronic Materials Technology)
Description
High-resolution photoinduced transient spectroscopy (HRPITS) and photoluminescence (PL) measurements have been employed to studying the annealing-induced changes in the defect structure of MCz Si irradiated with the very high fluence of 1-MeV neutrons. The defect centres were studied after three annealing steps: 1h, 80 oC; 1h, 80 oC + 1h, 160 oC and 1h, 80 oC + 1h, 160 oC + 1h, 240 0C. It is found that annealing allows the observation of the self-interstitial related W-line in the PL spectra. This is probably due to the annihilation of non-radiative recombination centres. The defect reaction induced by the annealing lead to the significant increase of the A-centres concentration.
Author
Prof.
Pawel Kaminski
(Institute of Electronic Materials Technology)
Co-authors
Mrs
Barbara Surma
(Institute of Electronic Materials Technology)
Dr
Roman Kozlowski
(Institute of Electronic Materials Technology)
