Speaker
Ms
Alexandra Junkes
(Institute for Experimental Physics, University of Hamburg)
Description
Isothermal annealing studies at 60° C and 300° C were performed on thin FZ, MCz and EPI-DO n-type silicon diodes after irradiation with reactor neutrons. Deep level transient spectroscopy (DLTS) was used to follow the evolution of defect levels while C/V and I/V characteristics were taken to determine the electrical properties (depletion voltage and leakage current) of the detectors. A possible correlation between the evolution of cluster related DLTS-signals and the current annealing was studied. Further results obtained by DLTS-measurements concerning the annealing behaviour of defect levels in the different materials will be presented and discussed.
Author
Ms
Alexandra Junkes
(Institute for Experimental Physics, University of Hamburg)
Co-authors
Dr
Eckhart Fretwurst
(Institute for Experimental Physics, University of Hamburg)
Prof.
Gunnar Lindström
(Institute for Experimental Physics, University of Hamburg)
Dr
Ioana Pintilie
(Institute for Experimental Physics, University of Hamburg; NIMP, Bucharest-Magurele)
