9th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Hiroshima, Japan

Active edge pixel sensors and development of four-side buttable modules using vertical integration technologies

2 Sept 2013, 16:40

20m

Dahlia (B2F) (International Conference Center Hiroshima)

ORAL Pixels (including CCD's) - Charged particle tracking Session 2

Speaker

Anna Macchiolo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

Description

We present an R&D activity focused on the development of novel modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). They consist of n-in-p pixel sensors, 100 or 200 μm thick, produced at VTT (Finland) with an active edge technology, to considerably reduce the dead area at the periphery of the device. The sensors are interconnected with solder bump bonding to the ATLAS FE-I3 and FE-I4 read-out chips, and characterized by means of scans with radioactive sources and beam tests at the CERN-SPS and DESY. The results of these measurements will be discussed for devices before and after irradiation up to a fluence of 5x10**15 n_eq /cm**2 . We will also report on the R&D activity to obtain Inter Chip Vias (ICVs) on the ATLAS read-out chip in collaboration with the Fraunhofer Institute EMFT. This step is meant to prove the feasibility of the signal transport to the newly created readout pads on the backside of the chips allowing for four side buttable devices without the presently used cantilever for wire bonding. The read-out chips with ICVs will be interconnected to thin pixel sensors, 75um and 150um thick, with the Solid Liquid Interdiffusion (SLID) technology, which is an alternative to the standard solder bump-bonding.

Presentation materials

Slides

Macchiolo_Hiroshima.pdf