12th RD50 Workshop

Electrical characterization of p- and n- type 150um epi-Si diodes irradiated by protons and neutrons

2 Jun 2008, 13:30

20m

Ljubljana, Slovenia

Defect Engineering and Pad Detector Characterization Defect Engineering & Pad Detector Characterization I

Speaker

Volodymyr Khomenkov (Hamburg University)

Description

Epi-Si 150 um thick diodes on p- and n-type bulk were studied after irradiation by 24 Gev/c protons (CERN PS) and reactor neutrons (Ljubljana) up to equivalent fluence of several times E15/cm2 and following isothermal annealing at 80C.

Presentation materials

Slides

21-Khomenkov_Epi150.pdf