2–4 Jun 2008
Ljubljana, Slovenia
Europe/Zurich timezone

Annealing studies on MCz after 23 GeV proton irradiation and CCE of 150um epitaxial silicon devices

2 Jun 2008, 13:50
20m
Ljubljana, Slovenia

Ljubljana, Slovenia

Defect Engineering and Pad Detector Characterization Defect Engineering & Pad Detector Characterization I

Speaker

Mrs Katharina Kaska (CERN)

Description

MCz (n- and p-type) and FZ (n-type) diodes were irradiated with 23 GeV protons and investigated with CV,IV and CCE (beta-source, 2mus shaping) measurements. Isothermal annealing studies at 80° C were performed on a subset of samples irradiation with 3.5e14 protons/cm2. Finally, these detectors were used for isochronal annealing studies between 100° C and 220° C, for which the charge collection efficiency was measured after each annealing step. In addition an measurements on epitaxial detectors of 150 mum thickness irradiated with protons and neutrons were performed.

Author

Mrs Katharina Kaska (CERN)

Co-authors

Dr Manuel Fahrer (CERN) Dr Michael Moll (CERN)

Presentation materials