Speaker
Donato Creanza
(University/INFN Bari)
Description
Several MCz diodes from the SMART production, of both n- and p-type, have been irradiated on the 24 GeV/c proton beam at CERN up to a fluence of 1.59 1015 neq.In the framework of a common RD50 research program, electrical characterization and TCT studies have been performed as a function of the annealing time. All irradiated samples show a clear double junction effect. Both annealing and TCT studies seem to indicate the occurrence of type inversion of p-type diodes at high fluences.
Author
Donato Creanza
(University/INFN Bari)
