3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)

Development of silicon microstrip sensors in 150 mm p-type wafers

14 Apr 2008, 14:30

30m

Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations P-type strip detectors 2

Speaker

Yoshinobu Unno (KEK)

Description

We have fabricated silicon microstrip sensors in 150 mm p-type wafers and carried out irradiation of protons of 70 MeV up to 2x10^15 1-MeV neutron equivalent/cm^2. Full depletion votages along the fluence of the protons of 70 MeV have shown quite different development than those in 100 mm p-type wafers. The sensors are made of different isolation structures in the n-strip side. Characterization of the isolation structures are also made for the onset voltages of microdischarge, isolation of the n-strips, etc.

Presentation materials

Slides

unnoPtypeTrento08_pub.pdf

unnoPtypeTrento08_pub.ppt