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3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)

14–16 Apr 2008
Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain
Europe/Zurich timezone

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Radiation effects in p-type silicon diodes irradiated with protons and neutrons

14 Apr 2008, 15:30
30m
Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Residencia de Investigadores del CSIC-Generalitat de Catalunya Carrer Hospital, 64. E08001, Barcelona, Spain
Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations P-type strip detectors 2

Speaker

Vladimir Cindro (Jozef Stefan Institute)

Description

Radiation effects in standard FZ, DOFZ and MCZ Si diodes were evaluated with C/V, I/V and TCT measurements. FDV, I and trapping times were measured. Diodes were irradiated with protons and neutrons with fluences up to 3*10**14. Measurements after combined proton/neutron irradiation will be also shown.

Author

Vladimir Cindro (Jozef Stefan Institute)

Co-authors

Dr Giulio Pellegrini (CNM) Gregor Kramberger (Jozef Stefan Institute) Igor Mandić (Jozef Stefan Institute) Jožef Pulko (Jozef Stefan Institute) Manuel Lozano (Centro Nacional de Microelectronica (CNM-IMB)) Marko Mikuž (Jozef Stefan Institute) Marko Zavrtanik (Jozef Stefan Institute) Miguel Ullan (Centro Nacional de Microelectronica (CNM-IMB))

Presentation materials

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