3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)

Session

P-type strip detectors 4

D15-M1

15 Apr 2008, 09:30

Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

18. On MCz SCSI after 24 GeV/c proton irradiation

Donato Creanza (Dipartimento Interateneo di Fisica-Universita degli Studi di Bar)

15/04/2008, 09:30

Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations

Several MCz diodes from the SMART production, of both n- and p- type, have been irradiated on the 24 GeV/c proton beam at CERN up to a fluence of 1.59 10^15 neq. In the framework of a common RD50 research program, electrical characterization and TCT studies have been performed as a function of the annealing time. All irradiated samples show a clear double junction effect. Both annealing and...

15. Simulation of moderated p-spray isolations with DIOS and TeSCA

Michael Beimforde (Werner-Heisenberg-Institut - Max-Planck-Institut fuer Physik)

15/04/2008, 10:00

Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations

The electrical isolation between the ATLAS pixels plays an important role for the electric fields in the pixel sensors and has an influence on the spatial resolution. The simulation programs Dios and TeSCA are used to simulate n-in-n and n-in-p sensors with different geometries and isolation parameters before and after irradiation to study their effects on the operating conditions.