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24th RD50 Workshop (Bucharest)

11–13 Jun 2014
Bucharest
Europe/Zurich timezone

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Contribution List

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  1. 38. Workshop opening
    Dr Ionut Enculescu (Director of NIMP, Bucharest)
    11/06/2014, 09:00
  2. 15. Workshop opening
    Dr Ioana Pintilie (NIMP Bucharest-Magurele, Romania), Michael Moll (CERN)
    11/06/2014, 09:05
  3. 2. Investigation of point and extended defects in electron irradiated silicon – dependence on the particle energy
    Roxana Radu (National Institute of Materials Physics NIMP, Bucharest, Romania)
    11/06/2014, 09:10
    Silicon samples of n-type have been irradiated with electrons in the range 1.5 – 27 MeV and different fluences. The Mott cross section as function of silicon recoils kinetic energy revealed that the threshold for the production of cluster related defects is 1.2 keV. For the characterization of the radiation induced defects the Thermally Stimulated Current (TSC) and Deep Level Transient...
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  4. 18. Effect of background impurities and electronic excitation on the behavior of radiation induced interstitial boron complexes
    Leonid Makarenko (B)
    11/06/2014, 09:30
    New experimental data have been presented on substitutional boron removal under irradiation and its restoration under thermal and recombination annealing in epitaxial Si structures.
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  5. 4. A<sub>Si</sub>-Si<sub>i</sub> defect as possible origin of electronically activated degradation of boron and indium doped silicon
    Dr Kevin Lauer (CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH)
    11/06/2014, 09:50
    New possibilities in the field of silicon characterization (low-temperature PL spectroscopy and low-temperature FTIR) at CiS are presented. Furthermore recent results on investigations regarding a defect, which appears due to electron or photon injection and degrades the charge carrier lifetime in boron doped silicon, are shown. The defect is known since the 1970s. First it was found to...
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  6. 8. Electron Induced Damage in Silicon - TRIM and TCAS Simulations
    Prof. Gunnar Lindstroem (University of Hamburg)
    11/06/2014, 10:10
    The maximum Si-recoil energy is strongly dependent on the electron energy, reaching values at e.g. 30 MeV, which are also specific for MeV neutron irradiation. A systematic investigation of the damage on the electron energy could therefore reveal a tool to distinguish between point and cluster effects, see report given ba Roxana Radu. Supporting calculations are presented here. Recoil energy...
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  7. 5. Modelling Vacancy-Interstitial Clusters and their effect on on Carrier Transport in Silicon
    Dr Ernestas Zasinas (Vilnius University)
    11/06/2014, 11:00
    High energy particle bombarding creates both point defects and clusters of defects within the target material. We model such a cluster of defects in silicon crystal as a few nanometer size region of randomly displaced ions which may be understood also as an aggregate of vacancy and interstitial defects. The electronic states within the cluster and its environment are calculated using density...
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  8. 27. ESR investigation of paramagnetic point defects in O doped crystalline Si-FZ irradiated with 27 MeV electrons
    S.V. Nistor (NIMP - Magurele (RO))
    11/06/2014, 11:20
    The presence and nature of the paramagnetic point defects produced in single crystalline samples of high resistivity (3-4 kOhm cm) n-type silicon (FZ- Wacker), doped with 17O enriched isotope, after irradiation with 27MeV electrons (2 x 1016 cm-2), has been investigated by Q-band (34 GHz) electron spin resonance (ESR) spectroscopy in the 10- 296 K temperature range. Changes in the nature and...
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  9. 28. High resolution transmission electron microscopy (HRTEM) investigations of silicon irradiated with high energy electrons
    Leona Nistor (NIMP Bucharest-Magurele (RO))
    11/06/2014, 11:40
    The formation and evolution of extended defects following irradiation with 15 and 27 MeV electrons and further thermal annealing treatments have been observed by HRTEM on a high resolution analytical JEOL ARM 200F electron microscope. Clusters of point defects (vacancies and interstitials) with dimensions smaller than 3 nm are observed subsequent to irradiation. Their density increases with...
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  10. 23. Discussion: Defect and Material Characterization
    Dr Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
    11/06/2014, 12:00
  11. 14. Measurement of the drift velocities of electrons and holes in high-ohmic <100> silicon
    Christian Scharf (Hamburg University (DE))
    11/06/2014, 14:00
    Simulations of silicon sensors and extraction of parameters from (edge-)TCT measurements rely on the knowledge of a number of material parameters. One of them is the drift velocity for electrons and holes as function of electric field and temperature in high-purity silicon. So far the information on drift velocities for <100> silicon is quite limited. Therefore, <111> results are typically...
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  12. 13. TCT, eTCT and I-DLTS measurement setups at the CERN SSD Lab
    Christian Gallrapp (CERN)
    11/06/2014, 14:20
    Setups based on the transient current technique using pulsed LASERs with 660nm and 1064nm wavelength were built at the CERN SSD Lab. Microsecond LASER pulses are used in the I-DLTS setup to investigate charge carrier detrapping on irradiated silicon sensors. First measurement results from a set of proton irradiated silicon diodes exposed to red laser pulses of 1us to 5us are presented....
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  13. 9. CCE and Edge_TCT measurements with ATLAS 07 and ATLAS 12 detectors
    Vladimir Cindro (Jozef Stefan Institute (SI))
    11/06/2014, 14:40
    CCE efficiencies of two detector batches were measured before and after irradiations with neutrons and protons to fluences up to 5 10**15 cm-2. Annealing was performed at 60 C. Edge TCT measurements were used to probe the drift velocity distribution in the detector volume.
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  14. 11. Status of Silicon Strip Sensor Measurements at Liverpool
    Sven Wonsak (University of Liverpool (GB))
    11/06/2014, 15:00
    To investigate the current dependence of irradiated silicon strip detectors, ATLAS07 and Micron sensors were irradiated at Birmingham and Ljubljana with doses up to 2e16 neq/cm$^2$. IV measurements were performed at different temperatures which allow the calculation of the effective gap energy Eg (IV scaling) and the current related damage rate $\alpha$. TCT and edge TCT (Transient Current...
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  15. 3. Heavily irradiated thin n-in-p planar pixel sensors and status of the new common RD50 productions
    Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
    11/06/2014, 15:20
    N-in-p planar pixel sensors with an active thickness of 200 μm produced at CiS, and 100-200 μm thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips and irradiated in Ljubljana, Los Alamos and KIT up to a fluence of 1.4×10^{16} n_{eq}/cm^2. Thin sensors are designed to ensure radiation hardness at high fluences, while...
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  16. 32. Status of the new irradiation facilities in the CERN EAST HALL
    Michael Moll (CERN)
    11/06/2014, 15:40
    The proton and mixed-field irradiation facilities in the CERN PS East Area (known as IRRAD1 and IRRAD2), were heavily and successfully exploited for irradiation of particle detectors, electronic components and materials since 1992. These facilities exploited the particle bursts - protons with momentum of 24GeV/c - delivered from the PS accelerator in “spills” of about 400ms (slow extraction)....
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  17. 30. SiMS measurements & Simulation, Varied bias rail geometry structures characterization and TCAD simulation
    Vagelis Gkougkousis (Universite de Paris-Sud 11 (FR))
    12/06/2014, 09:00
    Secondary Ion Mass Spectroscopy measurements, conducted to calibrate the new edgeless pixel production for the High Luminosity upgrade of the LHC, are being compared with TCAD simulated doping profiles for n and p implanted wafers. On the same context, simulation and characterization of varied bias rail geometry structures is being presented in an attempt to understand and compensate for the...
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  18. 20. A method to model the accumulation of oxide charge with fluence in an irradiated MSSD
    Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))
    12/06/2014, 09:20
    Measurements have shown a significant position dependency of CCE for charged hadron irradiated MSSDs. When this is reproduced by Synopsys TCAD simulation using non-uniform 3-level defect model (R. Eber tuned proton model supplemented by shallow acceptor level close to detector surface) the phenomenon is seen to be dependent of the concentration of the shallow acceptors and the oxide charge at...
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  19. 26. Simulations of Hadron Irradiation Effects for Si Sensors Using Effective Bulk Damage Model
    Ranjeet Ranjeet (University of Delhi (IN))
    12/06/2014, 09:40
    In order to address the expected radiation damage problems in the future generations of colliders, there have been constant efforts to understand the basic mechanism of radiation damage and its effects on the Si sensor properties. Extensive studies based on device measurements and performance simulations have been carried out. Despite these efforts, many interesting problem remain unsolved or...
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  20. 1. Trapping in p-on-n silicon sensors at fluences relevant for the HL-LHC
    Thomas Poehlsen (University of Hamburg)
    12/06/2014, 10:00
    Effective trapping rates in 200 um thick n-type silicon sensors are determined after irradiation of up to 3 x 1015 neq/cm2 for electrons and holes. For this pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs close the the electrodes of single-pad sensors (diodes). The charge-collection efficiencies were determined separately for electrons...
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  21. 10. Lorentz angle measurement on ATLAS silicon microstrip sensors
    Eda Yildirim (Deutsches Elektronen-Synchrotron (DE))
    12/06/2014, 11:00
    The Large Hadron Collider (LHC) is planned to be upgraded to High-Luminosity LHC (HL-LHC) by 2023. At the same time, the ATLAS inner tracker will be replaced by an all silicon tracker. During HL-LHC running, strip detectors in the inner tracker will have to withstand radiation doses up to $10^{15} neq/cm^{−2}$ . As a result of the radiation damage, the Lorentz angle of the strip sensors is...
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  22. 6. Edge-TCT studies of non-irradiated HVCMOS sensors
    Gregor Kramberger (Jozef Stefan Institute (SI))
    12/06/2014, 11:20
    A HVCMOS sensor (HVCMOS2FEI4) was investigated before the irradiation with Edge-TCT. Key properties of the charge collection in p substrate were determined by different analysis methods. Good agreement between the measured and given substrate resistivity was found. The measurements revealed that the major contribution to the measured charge comes from the movement of carriers by diffusion and...
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  23. 35. Electric field measurement in irradiated silicon sensors by means of simulations and beam tests [Skype presentation]
    Mr Igor Rubinskiy (DESY), Marco Bomben (Centre National de la Recherche Scientifique (FR))
    12/06/2014, 11:40
    Beam test data and simulations can make accessible the electric field profile of silicon sensors. Different bulk materials, irradiation and annealing scenarios can be contrasted thanks to the charge profile technique (e.g.: T. Lari and C. Troncon, IEEE TNS, VOL. 53, NO. 5, OCTOBER 2006; V. Chiochia, IEEE TNS, VOL. 52, NO. 4, AUGUST 2005) High pointing resolution telescopes and detailed TCAD...
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  24. 37. Impact of Low-Dose Electron Irradiation on the Charge Collection of n+p Silicon Strip Sensors
    Thomas Poehlsen (University of Hamburg)
    12/06/2014, 12:00
    The response of p+n strip sensors to electrons from a 90Sr source was measured using the ALiBaVa read-out system. Sensors before hadron irradiation and after a mixed irradiation with 15 1014 1 MeV neq/cm2 23 GeV protons plus 6 1014 1 MeV neq/cm2 reactor neutrons have been investigated. The measurements were performed over a period of several weeks, during which a number of operating conditions...
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  25. 36. Discussion Session: Simulations and Sensor Characterizations
    12/06/2014, 12:20
  26. 12. Radiation hardness of Low Gain Amplification Detectors (LGAD)
    Gregor Kramberger (Jozef Stefan Institute (SI))
    13/06/2014, 09:00
    Silicon n-p diodes with heavily doped p layer underneath the n implant were designed to benefit from charge multiplication process already before irradiation (Low Gain Amplification Detectors). Two different sets of such detectors with different gains were characterized before and after irradiation by reactor neutrons and recently also by 800 MeV protons to equivalent fluences of up to 1016...
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  27. 19. Segmented LGAD
    Hartmut Sadrozinski (SCIPP, UC santa Cruz)
    13/06/2014, 09:20
    Our experience with segmented LGAD is presented, based on charge collection data, C-V measurements and simulations. Alternatives to the present n++-p+-p- configuration are discussed.
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  28. 22. Fabrication of 200um thick p and n- type pad detectors with enhanced multi-plication effect
    Giulio Pellegrini (CNM-IMB-CSIC)
    13/06/2014, 09:40
    I will show the final design of the new mask for the fabrication of LGAD diodes, strips and pixel detectors.
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  29. 16. Timing properties of UFSD
    Mr Nicolo Cartiglia (Universita e INFN (IT))
    13/06/2014, 10:00
    In this contribution I review the progress towards the optimization of LGAD detectors for timing measurements. First results will be presented, together with a plan for additional measurements
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  30. 24. Preliminary results on proton irradiated LGAD PAD detectors
    Dr Virginia Greco (IMB-CNM-CSIC)
    13/06/2014, 11:00
    We will present the latest measurements of LGAD diodes performed with TCT laser (red and infra-red) and the preliminary measurements of LGAD PAD detectors irradiated with protons at Los Alamos.
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  31. 25. A Long Term Study of Charge Multiplication
    Ulrich Parzefall (Albert-Ludwigs-Universitaet Freiburg (DE))
    13/06/2014, 11:20
    We evaluate the long term evolution of the charge multiplication effect found in some sensors. This procedure is intended to test operation under realistic LHC conditions, such as exposure to extreme bias voltages for many days, bias voltage cycling, and running at very low temperature. We aim to understand if charge multiplication may be usefully relied upon for HL-HLC operation, or if it...
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  32. 31. Discussion on LGAD
    Virginia Greco (Instituto de Fisica Corpuscular (ES))
    13/06/2014, 11:40
  33. 7. Beam test of thin epitaxial silicon strip sensors for the CMS phase II pixel upgrade
    Matteo Centis Vignali (Hamburg University (DE))
    13/06/2014, 14:00
    The high luminosity upgrade of the Large Hadron Collider (HL-LHC) foreseen for 2022 will allow the experiments at the collider to collect data at a luminosity of $5 × 10^{34}$ cm$^{−2}$s$^{−1}$, enhancing the discovery potential for new physics. The precise determination of vertices in the high radiation environment close to the HL-LHC interaction points demands the development of solid state...
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  34. 33. Characterisation and testing of ATLAS FE-I4 devices for the HL-LHC
    Clara Nellist (LAL-Orsay (FR))
    13/06/2014, 14:20
    The LHC accelerator complex will be upgraded in 2022 to the High-Luminosity-LHC in order to significantly increase statistics for the various physics analyses. These modifications will result in an increase in occupancy and of radiation damage to the ATLAS Inner Detector. Characterisation and testing in a laboratory environment of novel ATLAS planar pixel designs for the HL-LHC will be...
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  35. 29. Slim-edge and non-uniformly irradiated 3D silicon pixel detectors for forward physics experiments
    Joern Lange (IFAE Barcelona)
    13/06/2014, 14:40
    The ATLAS Forward Physics (AFP) project plans to install 3D silicon pixel detectors 210 m away from the interaction point and very close to the beamline at a radius of about 2-3 mm. This implies the need of slim edges in the order of 100 µm for the sensor side facing the beam to minimise the dead area. Another challenge is an expected non-uniform irradiation of the pixel sensors with high...
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  36. 34. Investigation of radiation hardness of alumina layer for slim edge devices
    Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
    13/06/2014, 15:00
    We have been investigating Scribe-Cleave-Passivate (SCP) method of making slim edges on silicon sensors. For n-type devices commonly used dielectrics, such as silicon oxide and nitride, work well and they are radiation resistant. For p-type devices we used alumina (Al2O3) for this purpose. Our earlier radiation tests revealed its potential weakness for low ionizing doses. In this work we have...
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  37. 17. Evaluation of the Low Resistance Strip Sensors Fabricated at CNM
    Dr Miguel Ullan Comes (Instituto de Fisica Corpuscular (ES))
    13/06/2014, 15:20
    Results from the second batch of Low-R strip sensors fabricated at CNM-Barcelona will be presented. This second batch implements several technological and design changes in order to correct the PTP structure, not fully functional in the first batch. The tests on the newly fabricated sensors show good general performance plus a correct behaviour of the PTP structure. The results from the laser...
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  38. 0. Studies of radiation damage in the LHCb Vertex Locator after Run I.
    . On behalf of the LHCb VELO group (.), Agnieszka Oblakowska-Mucha (AGH University of Science and Technology (PL))
    13/06/2014, 15:40
    LHCb is a dedicated flavour physics experiment at the Large Hadron Collider at CERN. The Vertex Locator (VELO) is an important part of the LHCb tracking system, enabling precision measurements of beauty and charm mesons. It is the highest precision vertex detector at the LHC, featuring a single-hit resolution as good to 4μm. The VELO comprises 42 silicon micro-strip modules. A module is made...
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