11–13 Jun 2014
Bucharest
Europe/Zurich timezone

Effect of background impurities and electronic excitation on the behavior of radiation induced interstitial boron complexes

11 Jun 2014, 09:30
20m
Bucharest

Bucharest

Speaker

Leonid Makarenko (B)

Description

New experimental data have been presented on substitutional boron removal under irradiation and its restoration under thermal and recombination annealing in epitaxial Si structures.

Author

Co-authors

Dr Ioana Pintilie (NIMP Bucharest-Magurele, Romania) Michael Moll (CERN) Dr Stanislav Lastovskii (Scientific-Practical Materials Research Centre of NAS of Belarus)

Presentation materials