Conveners
Session 3 - TCAD simulations
- Michael Moll (CERN)
Vagelis Gkougkousis
(Universite de Paris-Sud 11 (FR))
12/06/2014, 09:00
Secondary Ion Mass Spectroscopy measurements, conducted to calibrate the new edgeless pixel production for the High Luminosity upgrade of the LHC, are being compared with TCAD simulated doping profiles for n and p implanted wafers. On the same context, simulation and characterization of varied bias rail geometry structures is being presented in an attempt to understand and compensate for the...
Timo Hannu Tapani Peltola
(Helsinki Institute of Physics (FI))
12/06/2014, 09:20
Measurements have shown a significant position dependency of CCE for charged hadron irradiated MSSDs. When this is reproduced by Synopsys TCAD simulation using non-uniform 3-level defect model (R. Eber tuned proton model supplemented by shallow acceptor level close to detector surface) the phenomenon is seen to be dependent of the concentration of the shallow acceptors and the oxide charge at...
Ranjeet Ranjeet
(University of Delhi (IN))
12/06/2014, 09:40
In order to address the expected radiation damage problems in the future generations of colliders, there have been constant efforts to understand the basic mechanism of radiation damage and its effects on the Si sensor properties. Extensive studies based on device measurements and performance simulations have been carried out. Despite these efforts, many interesting problem remain unsolved or...
Thomas Poehlsen
(University of Hamburg)
12/06/2014, 10:00
Effective trapping rates in 200 um thick n-type silicon sensors are determined after irradiation of up to 3 x 1015 neq/cm2 for electrons and holes.
For this pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs close the the electrodes of single-pad sensors (diodes).
The charge-collection efficiencies were determined separately for electrons...
Eda Yildirim
(Deutsches Elektronen-Synchrotron (DE))
12/06/2014, 11:00
The Large Hadron Collider (LHC) is planned to be upgraded to High-Luminosity LHC (HL-LHC) by 2023. At the same time, the ATLAS inner tracker will be replaced by an all silicon tracker. During HL-LHC running, strip detectors in the inner tracker will have to withstand radiation doses up to $10^{15} neq/cm^{−2}$ . As a result of the radiation damage, the Lorentz angle of the strip sensors is...
Gregor Kramberger
(Jozef Stefan Institute (SI))
12/06/2014, 11:20
A HVCMOS sensor (HVCMOS2FEI4) was investigated before the irradiation with Edge-TCT. Key properties of the charge collection in p substrate were determined by different analysis methods. Good agreement between the measured and given substrate resistivity was found. The measurements revealed that the major contribution to the measured charge comes from the movement of carriers by diffusion and...
Mr
Igor Rubinskiy
(DESY),
Marco Bomben
(Centre National de la Recherche Scientifique (FR))
12/06/2014, 11:40
Beam test data and simulations can make accessible the electric field profile of silicon sensors. Different bulk materials, irradiation and annealing scenarios can be contrasted thanks to the charge profile technique (e.g.: T. Lari and C. Troncon, IEEE TNS, VOL. 53, NO. 5, OCTOBER 2006; V. Chiochia, IEEE TNS, VOL. 52, NO. 4, AUGUST 2005) High pointing resolution telescopes and detailed TCAD...
Thomas Poehlsen
(University of Hamburg)
12/06/2014, 12:00
The response of p+n strip sensors to electrons from a 90Sr source was measured using the ALiBaVa read-out system. Sensors before hadron irradiation and after a mixed irradiation with 15 1014 1 MeV neq/cm2 23 GeV protons plus 6 1014 1 MeV neq/cm2 reactor neutrons have been investigated. The measurements were performed over a period of several weeks, during which a number of operating conditions...
