10th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices

Session

Poster Session

9 Oct 2014, 14:30

Firenze, Italy

0. Study on the Total Ionizing Dose Effects of SiGe HBTs Irradiated with 60Co γ Rays

Prof. Zheng Li (Xiangtan University, Xiangtan, Hunan ,411105, China)

09/10/2014, 14:30

The characteristic of the dc current gain degradation with dose and current injection level for SiGe HBT during 60Co gamma irradiation are measured and analyzed. Additionally, the typical dc and ac parameters degradation mechanisms are discussed. The experimental results of the dc and ac electronic parameters before and after irradiation are shown to result in the base current Ib, the...

27. Simulation of Synergistic Effects on Lateral PNP Bipolar Transistors induced by Neutron and Gamma Irradiation

Ms Chenhui Wang (Northwest Institute of Nuclear Technology of China,Xi’an 710024,China)

09/10/2014, 14:40

The numerical simulation methods of neutron displacement effects, total dose effects and ionizing/displacement synergistic effects are established in this work. By the use of semiconductor devices simulation software TCAD, numerical simulation of ionizing/displacement synergistic effects on lateral PNP bipolar transistors induced by neutron and gamma irradiation is carried out with the method...

64. Radiation tests of pixel readout chip designed in 40nm CMOS technology

Tadeusz SATŁAWA

09/10/2014, 14:50

The tests with gamma rays were performed on the pixel detector readout chip designed in TSMC 40nm CMOS technology. The ASIC works in single photon counting mode, consists of both analog and digital blocks including charge sensitive amplifier, two shapers, two discriminators, two separate counters and more supporting blocks. For the purpose of radiation hardness tests different radiation doses...

7. ATLAS Pixel IBL modules construction experience and developments for future upgrade

Andrea Gaudiello (Univerisyt of Genova and INFN)

09/10/2014, 15:00

The first upgrade of the ATLAS Pixel Detector is the Insertable B-Layer (IBL), just installed in May 2014 in the core of ATLAS. Two different silicon sensor technologies, planar n-in-n and 3D, were used, connected with the new generation 130nm IBM CMOS FE-I4 readout chip via solder bump-bonds. Production quality control tests were set up to verify and rate the performance of the modules...

54. Development of a bidimensional dosimeter for IMRT based on polycrystalline diamond

Margherita Zani (Universita' di Firenze), Monica Scaringella (University of Firenze, Italy)

09/10/2014, 15:10

A bidimensional dosimeter consisting of 12x12 pixels on a 2.5x2.5cm2-wide polycrystalline Chemical Vapour Deposited diamond (pCVD) has been manufactured. The prototype has been tested under Intensity Modulated Radiation Therapy (IMRT) fields for a possible application in pre-treatment verifications of cancer treatments. Tests have been performed under a 6 MVRX beam with an IMRT field for...

55. Belarusian HPHT diamonds. Material properties and detector characteristics

Leonid Makarenko (Belarusian University, Minsk)

09/10/2014, 15:20

N.M. Kazuchits, L.F. Makarenko, M.S. Rusetsky, Ya. I. Latushko Belarusian State University, Independence Ave. 4, 220030, Minsk Synthetic diamond crystals grown by the HPHT (High Pressure High Temperature) technique have impurities, such as nitrogen and metallic catalysts, as well as inclusion and structural defects, which result in variations of optical and electrical properties for...

15. Primary Experimental Radiation Effects Results of 28 Nanometer Configuration System-on-Chip(Xilinx Zynq-7010 SoC)

Dr Shuhuan Liu (School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an, Shaanxi, 710049,P.R. China)

09/10/2014, 15:30

The experimental system we established for evaluating the single event effects (SEE) and total ionizing dose effects (TID) of Xilinx MicroZed Zynq-7010 SoC was introduced in the paper. The variation of the output current of the test SoC during 60Co gamma irradiation was measured. The irradiation dose rate was 0.04Gy(Si).s-1. The test SoC output current changing characteristics under the...

11. Simulation of Single Event Upset in SRAMs Induced by low Energy Proton With Geant4

Mr yonghong li (xi’an jiaotong university)

09/10/2014, 15:40

The architecture of SRAM and single event upset cross section computation approach are presented. Deposited energy and single event upset cross section are analyzed by the simulation of single event upset in different characteristic dimensions SRAMs induced by low energy proton using Monte-Carlo code Geant4. The simulating result shows that the deposited energy will decrease with the increase...

13. Primary Design and Numerical Simulation Studies on 3D Si SOI Microdosimeter

Dr Shuhuan Liu (School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an, 710049, China)

09/10/2014, 15:50

For evaluating and measuring the absorbed irradiation microdosimetry in radiobiology and other research areas, a primary 3D pixel structure of Si SOI microdosimeter was given in the paper. For optimizing the detector structure in order to reducing detector insensitive area and improving its charge collection efficiency, a primary optimized mircodosimeter with hexagon pixel structure was...