10th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices

Session

Materials and Defects Characterisation

8 Oct 2014, 14:30

Firenze, Italy

46. Electronic stimulation of interstitial defect reactions in irradiated p-type silicon

Leonid Makarenko (Belarusian University, Minsk)

08/10/2014, 14:30

L.F. Makarenko*, S.B. Lastovski**, M. Moll***, I. Pintilie**** *Belarusian State University, Minsk, Belarus **Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Belarus ***CERN, Geneva, Switzerland **** National Institute of Materials Physics, Magurele, Romania In silicon, the recombination enhancement of migration has been investigated in detail for aluminum...

34. On polarization in compensated semiconductors

Arie Ruzin (Tel Aviv University (IL))

08/10/2014, 14:50

It is well known that in some detectors the performances deteriorate with the operation time or increasing flux (e.g. CdTe and CdZnTe detectors). This phenomenon is often described by the general term "polarization". The exact mechanism is usually unclear, but it is generally agreed that the effects are caused by a buildup of a space charge in the device. Such space charge decreases the...

35. Processing and characterization of epitaxial grown GaAs radiation detectors

Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))

08/10/2014, 15:10

Radiation detectors made of epitaxial GaAs are an alternative for silicon devices for spectroscopy and radiography applications requiring moderate photon energies more than 10 keV. Being basic starting material of optoelectronics industry, the processing technology of GaAs devices is well established. Atomic numbers (Z=31, 33) of GaAs extends the X-ray absorption edge beyond Si (Z=14)...

47. An evidence of strong electron-phonon interaction in the neutron irradiation induced defects in silicon

Vytautas RUMBAUSKAS (Vilnius University, Lithuania)

08/10/2014, 15:30

J.Vaitkus, V.Rumbauskas, G.Mockevicius, E.Zasinas, A.Mekys Dept. of New Materials Research and Measurement Technology, Institute of Applied Research Vilnius University, Sauletekio al. 9-III, Vilnius LT-10222, Lithuania It is known an investigation of photoconductivity dependence on excitation photon energy can be used for the deep level spectrum analyze, but an accurracy depends on model...