Thomas Hemperek
(Physikalisches Institut, University of Bonn, Germany)
09/10/2014, 11:20
A new type of sensor for ionizing radiation based on Partially Depleted High Voltage SOI technology (PD-SOI) has been developed.
Similar to exisiting SOI based monolithic active pixel sensors (MAPS) a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. However, compared with these...
Sonia Fernandez Perez
(CERN)
09/10/2014, 11:40
Silicon-on-insulator (SOI) technologies have been developed for applications which require radiation hardness since many years. However, for its use as particle detector the total ionizing dose response of SOI devices is more complex than bulk silicon devices due to the buried oxide (BOX). A significant influence of radiation damage in the BOX on the transistor characteristics due to the...
Serena Mattiazzo
(Università di Padova, Italy on behalf of the ALICE Collaboration)
09/10/2014, 12:00
The ALICE experiment at CERN will undergo a major upgrade in the second Long LHC Shutdown in the years 2018-2019; this upgrade includes the full replacement of the Inner Tracking System (ITS), deploying seven layers of Monolithic Active Pixel Sensors (MAPS). For the development of the new ALICE ITS, the Tower-Jazz 180 nm CMOS imaging sensor process has been chosen as it is possible to use...
Dario Bisello
(Universita e INFN (IT)), Dr
LILI DING
(INFN, Padova; Department of Information Engineering, Padova University, Italy), Dr
Marta BAGATIN
(Department of Information Engineering, Padova University, Italy)
09/10/2014, 12:40
Abstract: The paper reports the 65 nm CMOS transistors exposed to 3 MeV proton to study the total ionizing dose (TID) effect and displacement damage (DD) together. The proton fluence of 7×1014 p/cm2 is equivalent with 1 Grad(SiO2) total dose and 1016 n/cm2 1 MeV neutron. Under this unprecedented hostile environment, the degradation of 65 nm CMOS transistors was mainly due to TID effect....