Speaker
Mrs
Shuhuan Liu
(Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China.)
Description
The single event effects of DDR3 influenced on Xilinx Zynq-7010 SoC Microzed performance were tested with 1064nm laser irradiation. The major affecting factors responsible for SEE sensitive region distributions on DDR3 and the SEFI happening probabilities of SoC induced by laser irradiation on DDR3 were tested in detail. These experimental factors include the data communication modes between DDR3 and the circuit modules embedded in SoC, Microzed test board operating frequency, laser device power and its irradiation position on DDR3. The mechanisms of the SEE typical experimental results were primarily explored.
Primary authors
Dr
Peng Zhang
(Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China.)
Mrs
Shuhuan Liu
(Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China.)
Co-authors
Prof.
Chaohui He
(Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China.)
Dr
Xiaozhi Du
(Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China.)
Dr
Xucheng Du
(Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China.)
Dr
Yao Zhang
(Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China.)
Dr
Yonghong Li
(Xi’an Jiaotong University, Xi’an, Shaanxi, 710049, China.)
Dr
hang Zang
(Xi'an Jiaotong Univ.)
