Speaker
Giovanni Calderini
(Centre National de la Recherche Scientifique (FR))
Description
In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective.
The presentation describes the performance of novel n-in-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, some feedback from preliminary results of the first beam test will be discussed.
Authors
Alessandro La Rosa
(University of California,Santa Cruz (US))
Dr
Alvise Bagolini
(Fondazione Bruno Kessler (FBK-CMM), Trento, Italy)
Audrey Ducourthial
(Centre National de la Recherche Scientifique (FR))
Gabriele Giacomini
(Fondazione Bruno Kessler)
Giovanni Calderini
(Centre National de la Recherche Scientifique (FR))
Giovanni Marchiori
(LPNHE Paris)
Luciano Bosisio
(Universita e INFN, Trieste (IT))
Marco Bomben
(Centre National de la Recherche Scientifique (FR))
Maurizio Boscardin
(Unknown)
Nicola Zorzi
(Fondazione Bruno Kessler - FBK)
