25–29 Sept 2015
International Conference Center (also named as <a href="http://www.jdnyhotel.com/index.php" target="_blank">“Nanyang Hotel”</a>)
PRC timezone

Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

27 Sept 2015, 10:20
20m
International Hall (International Conference Center (Nanyang Hotel))

International Hall

International Conference Center (Nanyang Hotel)

ORAL Pixels (including CCD's) - Charged particle tracking Pixels (including CCD's)-2

Speaker

Giovanni Calderini (Centre National de la Recherche Scientifique (FR))

Description

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The presentation describes the performance of novel n-in-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, some feedback from preliminary results of the first beam test will be discussed.

Primary authors

Alessandro La Rosa (University of California,Santa Cruz (US)) Dr Alvise Bagolini (Fondazione Bruno Kessler (FBK-CMM), Trento, Italy) Audrey Ducourthial (Centre National de la Recherche Scientifique (FR)) Gabriele Giacomini (Fondazione Bruno Kessler) Giovanni Calderini (Centre National de la Recherche Scientifique (FR)) Giovanni Marchiori (LPNHE Paris) Luciano Bosisio (Universita e INFN, Trieste (IT)) Marco Bomben (Centre National de la Recherche Scientifique (FR)) Maurizio Boscardin (Unknown) Nicola Zorzi (Fondazione Bruno Kessler - FBK)

Presentation materials