Mr
Rodrigo Martínez-Val Peñalosa
(UIMP - Vicerrector de Innovación y desarrollo de proyectos)
22/06/2015, 10:00
Ivan Vila Alvarez
(Universidad de Cantabria (ES)),
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
22/06/2015, 10:10
Juozas Vaitkus
(Vilnius University)
22/06/2015, 10:20
Standard (20 min including discussion)
Irradiation by electrons causes rather small decrease of electron mobility, only at high fluence the tendency to appear of microinhomogeneities appear. The electron mobility decreases up to twice in the neutron irradiated up to fluence 1e16 cm-2. An origin of electron mobility change investigated by analyze of its temperature dependence. A possible fit to experimental data was found if the...
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
22/06/2015, 10:40
Standard (20 min including discussion)
The study of high resistivity n-type silicon diodes irradiated with electrons of energies ranging from 1.5 MeV to 27 MeV have enabled us to scan the generation, time evolution and generation rates of point defects and small defect clusters having a direct impact on the device performance over a large irradiation fluence range. It is shown that this offers the unique opportunity to follow the...
Juozas Vaitkus
(Vilnius University)
22/06/2015, 11:30
Standard (20 min including discussion)
High energy particle irradiation created cluster defect model is based on the particle bombardment process scenario. The incident particle strikes the crystal lattice at the point of interaction and initiate the movement of lattice ions along with itself. The moving group of ions leave the vacancy region behind itself and further destroy the lattice structure causing other ions to leave their...
Gregor Kramberger
(Jozef Stefan Institute (SI))
22/06/2015, 11:50
Standard (20 min including discussion)
The studies of initial acceptor removal in high resistivity
p-type silicon detectors are scarce, mainly due to minor impact on operation of standard p-type detectors at high fluences expected at HL-LHC.
On the other hand initial acceptor removal is of prime importance for radiation
hardness of new detector technologies such as Low Gain Amplification
Detectors and HV-CMOS sensors,...
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
22/06/2015, 12:10
Joern Lange
(IFAE Barcelona)
22/06/2015, 15:30
Standard (20 min including discussion)
3D pixel detectors have advanced rapidly recently, leading to their first successful installation in the ATLAS IBL and the decision to install them in the ATLAS Forward Proton (AFP) experiment, which is foreseen as early as this year’s winter shutdown. 3D detectors are also a promising candidate for the innermost layer of trackers in the HL-LHC experiments. This presentation will summarise the...
Giulio Pellegrini
(Universidad de Valencia (ES))
22/06/2015, 15:50
Standard (20 min including discussion)
I will present the last fabrication run ongoing at CNM-IMB on 3D detectors activityes ofr the LHC upgrade.
Ivan Lopez Paz
(IFAE Barcelona)
22/06/2015, 16:10
Standard (20 min including discussion)
Highly segmented (50x50 µm²) silicon sensors imply a challenge on the forward regions of the tracker (high-ŋ). Although under such conditions the total charge deposited is large, due to the high segmentation, the charge deposited per pixel is ~3.3ke along the 50 µm pitch pixel (1-2 times the typical threshold in an FE-I4 chip). This low charge collection could lead to high pixel inefficiencies...
Alexander Dierlamm
(KIT - Karlsruhe Institute of Technology (DE))
22/06/2015, 16:30
Standard (20 min including discussion)
Within this project we want to produce mini strip sensors on FZ and N-rich FZ wafers to compare CCE at high fluences.
Giulio Pellegrini
(Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
23/06/2015, 09:00
Standard (20 min including discussion)
I will report the status of the RD50 projects for LGAD and 3D detectors.
Dr
Salvador Hidalgo
(Centro Nacional de Microelectronica (IMB-CNM-CSIC))
23/06/2015, 09:20
Standard (20 min including discussion)
We will present the first technological developments at CNM to fabricate a new p-on-p position-sensitive-detector with low signal amplification useful as well for timing applications. This device is based on a double-sided LGAD with pad-like multiplication structure in the back-side and ohmic read out in the front side. It is has been named “inverted” LGAD (iLGAD).
Christian Gallrapp
(CERN)
23/06/2015, 09:40
Standard (20 min including discussion)
Red and IR LASER TCT measurements have been performed on LGAD samples fabricated in the Run7062. The study focuses on charge collection and gain properties before and after irradiation with neutron and protons up to fluences of 1E16$n_{eq}cm^{-2}$. A second focus is the analysis of inhomogeneous behavior observed during TCT surface scans with front and back side exposure. In unirradiated LGAD...
Vagelis Gkougkousis
(Laboratoire de l'Accelerateur Lineaire (FR))
23/06/2015, 10:00
Standard (20 min including discussion)
Trough SiMS measurements, the evolution of the doping profile is been studied for irradiated NinN samples at fluences of 10e15neq/cm2, while the transient current technique is used on diodes of the same implantation profile n order to evaluate the electrical characteristics evolution as a function of the received dose. Comparison and conclusions are established with the non-irradiated case...
Ivan Vila Alvarez
(Universidad de Cantabria (ES))
23/06/2015, 10:20
After the first proof-of-concept of the TCT technique based on the Two-Photon-Absortion process using a 1300nm femtosecond laser on non-irradiated silicon diodes. we aim to complete the feasibility study of the TPA-TCT technique on irradiated sensors. As it is well known, irradiation creates localized deep energy levels (DL) inside the semiconductor’s forbidden gap between the conduction and...
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
23/06/2015, 10:40
Standard (20 min including discussion)
Thin Low-Gain Avalanche detectors are expected to have very good time resolution.
We analyze data from a CERN beam test and show the requirements for truly ultra-fast silicon detectors (UFSD).
Marko Zavrtanik
(Jozef Stefan Institute (SI))
23/06/2015, 11:20
Standard (20 min including discussion)
A presentation of small portable TCT will ge given. The system can be used as a tool for material studies or for educational purposes.
Nicolo Cartiglia
(Universita e INFN Torino (IT))
23/06/2015, 11:30
Standard (20 min including discussion)
In this talk I will present the most recent timing measurements performed in the last CNM LGAD production using the laser system in Torino.
Giulio Pellegrini
(Universidad de Valencia (ES))
23/06/2015, 11:55
Esa Tuovinen
(Helsinki Institute of Physics (FI))
23/06/2015, 12:25
Standard (20 min including discussion)
Atomic layer deposition (ALD) is well-established and reliable method for depositing thin film layers. Earlier we have demonstrated the use of ALD alumina (Al2O3) layers in the passivation of p-type silicon sensors. With alumina passivation we can leave out p-stop and p-spray structures and, thus, simplify the sensor manufacturing process. In the sensors used in the future upgrades of LHC...
Miguel Ullan Comes
(CNM-Barcelona (ES))
23/06/2015, 12:45
Standard (20 min including discussion)
A status will be given on the proposal of the use of a second metal layer for the integration of pitch adaptors in the fabrication of large-área strip sensors for high energy physics experiments.
Dr
Alexander Lawerenz
(CiS Forschungsinstitut fuer Mikrosensorik)
23/06/2015, 13:05
Standard (20 min including discussion)
Smaller dimensions for CMS and ATLAS pixel sensors require smaller dimensions for the under bump metallisation (UBM) and for the solder bumps which are connecting the radiation sensors to the FE-I chips. Whereas 40 to 50 µm large solder bumps are state of the art, future bumps have to be smaller than 30 µm. Another future task is to increase the number of solder bumps per area. CiS is working...
Alvaro Dosil Suarez
(Universidade de Santiago de Compostela (ES))
23/06/2015, 15:30
Standard (20 min including discussion)
The upgrade of the LHCb experiment, planned for 2018, will transform the experi-
ment to a trigger-less system reading out the full detector at 40 MHz event rate. All
data reduction algorithms will be executed in a high-level software farm with access to
the complete event information. This will enable the detector to run at luminosities of
2 1033cm-2s-1 and probe physics beyond the...
Sven Wonsak
(University of Liverpool (GB))
23/06/2015, 15:50
Standard (20 min including discussion)
The development of silicon detectors tolerant to extreme fluences for future high energy and high luminosity hadron colliders (like the upgrade of the present Large Hadron Collider to high luminosity at CERN) is demanded not only for instrumenting the innermost layers (where pixel sensors will be deployed) but also for particle flow calorimetry. The anticipated fluence levels range from...
Natascha Savic
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
23/06/2015, 16:10
Standard (20 min including discussion)
We present results of n-in-p pixel sensor prototypes of 100 to 270 μm thickness with different designs, focusing on alternative implementations of punch-through structures. A comparative study has been performed on pixel modules by means of radioactive sources and beam test measurements at the CERN-SPS and DESY. The results of these measurements will be discussed for devices irradiated up to a...
Clara Nellist
(LAL-Orsay (FR))
23/06/2015, 16:30
Standard (20 min including discussion)
It is known that for the current design of planar pixel sensors, there is a drop of efficiency at the punch-through structure of the biasing system at the edge of pixels. Various geometries, as part of the ATLAS Inner Tracker (ITK) upgrade, are being investigated to reduce this inefficiency.
Planar pixel sensors with multiple alternative bias rail geometries have been tested at the SPS beam...
Marcela Mikestikova
(Acad. of Sciences of the Czech Rep. (CZ))
23/06/2015, 16:50
Standard (20 min including discussion)
Surface properties of ATLAS12 n-on-p silicon sensors developed for the upgrade of the strip tracker of the ATLAS experiment were evaluated before and after irradiation. Different types of end-cap and barrel mini sensors were irradiated by gamma and protons at different irradiation sites. Influence of different sensor geometries, wafer resistivities and types of PTP structures on sensor...
Esteban Curras Rivera
(Universidad de Cantabria (ES))
23/06/2015, 17:10
Standard (20 min including discussion)
The CMS collaboration is planning to upgrade the forward calorimeters as these will not be sufficiently performant with the expected HL-LHC (High Luminosity LHC) conditions. After CMS committee decision, the High Granularity Calorimeter (HGC) is the technology chosen for this upgrade. It is realized as a sampling calorimeter with layers of silicon detectors that feature very high longitudinal...
Riccardo Mori
(Albert-Ludwigs-Universitaet Freiburg (DE))
23/06/2015, 18:00
Standard (20 min including discussion)
Recently it has been shown that silicon strip detectors, especially irradiated and showing charge multiplication, have decreasing performance when tested for several days under high voltage conditions.
This behaviour has been in some cases explained in some cases by a surface effect[1], coming from the dose released in the silicon oxide by the source used for the measurements. Other...
Gregor Kramberger
(Jozef Stefan Institute (SI))
23/06/2015, 18:20
Gianluigi Casse
(University of Liverpool (GB))
24/06/2015, 09:30
Standard (20 min including discussion)
There are several on-going device submissions in HV-CMOS technology from groups working on ATLAS pixel and strip systems. The main objective of these submissions is device evaluation as a possible alternative to the sensor modules in pixels and strips. Along with functional evaluation of these monolithic devices, the basic questions regarding sensor radiation hardness need to be addressed for...
Igor Mandic
(Jozef Stefan Institute (SI))
24/06/2015, 09:50
Standard (20 min including discussion)
The charge collection mechanism in HVCMOS detectors produced by AMS was studied with Edge-TCT and by measuring signals from minimum ionizing particles before and after neutron irradiation with up to 5e15 n/cm2. The sensors were produced for investigation of HVCMOS technology for pixel and strip detectors for the experiments at HL-LHC. In reverse biased HVCMOS sensors studied in this work...
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
24/06/2015, 10:10
Standard (20 min including discussion)
Radiation hardness of HVCMOSv3 to neutron irradiation was studied by using edge-TCT. The fluence range covered was 0, 1e15, 7e15 and 2e16 neq/cm-2. A test diode providing analog signal was readout using a fast current amplifier. The detector was mounted on a very simple PCB which allowed for a clean signal readout. Results on charge collection and depletion width are presented. Due to the very...
Daniel Muenstermann
(Universite de Geneve (CH)),
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
24/06/2015, 10:30
Standard (20 min including discussion)
First look at the results of proton irradiated detectors will be presented
Francisco Rogelio Palomo Pinto
(Universidad de Sevilla (ES))
24/06/2015, 11:20
Standard (20 min including discussion)
We will present our results with TCAD Simulations of three different 3D Devices (ROC4Sense, Fermilab, PSI46). We have I-V, C-V and MIP simulations before and after irradiation up to 2e15 n_eq/cm2. Also include will be a glimpse of our present effort for LGAD device simulations on MIP hit.
Timo Hannu Tapani Peltola
(Helsinki Institute of Physics (FI))
24/06/2015, 11:40
Standard (20 min including discussion)
Measurements have shown a reversal of the pulse polarity in the detector response to short-range charge injection
[V. Eremin et al., NIM A 500 (2003) & E. Verbitskaya et al., IEEE TNS 52 (2005) NO. 5]. Since the measured negative
signal is about 30–60% of the peak positive signal, the effect strongly reduces the CCE even in non-irradiated detectors.
For further investigation of the...
Gianluigi Casse
(University of Liverpool (GB)),
Timo Hannu Tapani Peltola
(Helsinki Institute of Physics (FI))
24/06/2015, 12:00
Francisco Rogelio Palomo Pinto
(Universidad de Sevilla (ES))
24/06/2015, 15:00
Pablo Fernandez Martinez
(Instituto de Fisica Corpuscular (ES))
24/06/2015, 16:00
