26th RD50 Workshop (Santander)

Speaker List

• Nicolo Cartiglia (Universita e INFN Torino (IT))
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    Timing performance of the last CNM LGAD production

• Gianluigi Casse (University of Liverpool (GB))
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    Discussion on HVCMOS and discussion on Simulations

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    HV-CMOS device fabrication

• Esteban Curras Rivera (Universidad de Cantabria (ES))
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    Update on radiation hardness of Silicon Diodes for the future CMS High Granularity Calorimeter (HGCAL).

• Alexander Dierlamm (KIT - Karlsruhe Institute of Technology (DE))
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    Proposal for a new RD50 project "Strip sensors made of N-rich FZ silicon"

• Alvaro Dosil Suarez (Universidade de Santiago de Compostela (ES))
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    Sensor Development for the LHCb VELO Upgrade

• Marcos Fernandez Garcia (Universidad de Cantabria (ES))
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    Technical information

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    A preliminary look at HV-CMOS eTCT data after p-irradiation

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    Radiation hardness of neutron irradiated HVCMOSv3

• Pablo Fernandez Martinez (Instituto de Fisica Corpuscular (ES))
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    Tutorial: part 2

• Christian Gallrapp (CERN)
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    TCT measurements on neutron and proton irradiated LGAD diodes

• Vagelis Gkougkousis (Laboratoire de l'Accelerateur Lineaire (FR))
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    Study of irradiated NinN production and LGAD dopping profiles

• Salvador Hidalgo (Centro Nacional de Microelectronica (IMB-CNM-CSIC))
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    New iLGAD detector development at CNM

• Gregor Kramberger (Jozef Stefan Institute (SI))
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    Discussion

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    Studies of initial acceptor removal in p-type silicon

• Joern Lange (IFAE Barcelona)
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    Recent progress on 3D pixel detectors

• Alexander Lawerenz (CiS Forschungsinstitut fuer Mikrosensorik)
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    Ongoing R&D Activities at CiS Forschungsinstitut fuer Mikrosensorik: Bump Bonding

• Ivan Lopez Paz (IFAE Barcelona)
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    Recent testbeam results of 50 µm pitch 3D sensors at high incidence angle for HL-LHC

• Igor Mandic (Jozef Stefan Institute (SI))
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    E-TCT and charge collection studies with irradiated HV-CMOS detectors

• Rodrigo Martínez-Val Peñalosa (UIMP - Vicerrector de Innovación y desarrollo de proyectos)
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    Welcome speech by UIMP vice-dean

• Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))
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    Update on Surface Studies of n-on-p Silicon Strip Sensors after irradiation to HL-LHC fluences: Prague status

• Riccardo Mori (Albert-Ludwigs-Universitaet Freiburg (DE))
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    Long term performance of silicon strip detectors under high bias voltage: charge collection and laser measurements

• Daniel Muenstermann (Universite de Geneve (CH))
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    A preliminary look at HV-CMOS eTCT data after p-irradiation

• Clara Nellist (LAL-Orsay (FR))
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    Test beam and clean room studies of ATLAS PPS modules with alternative bias rail geometries

• Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))
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    Tutorial: part 1

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    Status of 3D Detectors TCAD Simulations

• Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
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    Status of CNM RD50 Projects

• Giulio Pellegrini (Universidad de Valencia (ES))
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    Discussion on LGAD, timing

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    Status of 3D detector activities at CNM

• Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))
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    Discussion on HVCMOS and discussion on Simulations

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    Signal formation in segmented Si planar detectors: TCAD simulated effect of SiO2 passivation layer

• Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
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    Discussion on defect characterization

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    Defect generation and damage functions in electron irradiated silicon-dependence on particle energy

• Hartmut Sadrozinski (SCIPP, UC santa Cruz)
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    Time resolution of thin LGADs

• Natascha Savic (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
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    Investigation of hit efficiency of n-in-p pixels with different designs

• Esa Tuovinen (Helsinki Institute of Physics (FI))
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    TiN ALD layers for future pixel detector applications

• Miguel Ullan Comes (CNM-Barcelona (ES))
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    Embedded pitch adapters as a proposal for high-yield interconnection for strip sensors

• Juozas Vaitkus (Vilnius University)
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    Analysis of electron mobility dependence on electron and neutron irradiation in silicon

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    Modelling Radiation Induced Vacancy-Interstitial Clusters

• Ivan Vila Alvarez (Universidad de Cantabria (ES))
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    Discussion on TCAD

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    Technical information

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    Progress on the Two-Photon-Absortion TCT technique

• Sven Wonsak (University of Liverpool (GB))
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    Tests of 50 µm thick silicon micro-strip sensors after extreme fluences up to 3x10$^{16}$ neq cm$^{-2}$

• Marko Zavrtanik (Jozef Stefan Institute (SI))
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    A Compact/Educational-TCT presentation