26th RD50 Workshop (Santander)

Investigation of hit efficiency of n-in-p pixels with different designs

23 Jun 2015, 16:10

20m

Santander

Standard (20 min including discussion) Test beams and lab tests

Speaker

Natascha Savic (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

Description

We present results of n-in-p pixel sensor prototypes of 100 to 270 μm thickness with different designs, focusing on alternative implementations of punch-through structures. A comparative study has been performed on pixel modules by means of radioactive sources and beam test measurements at the CERN-SPS and DESY. The results of these measurements will be discussed for devices irradiated up to a fluence of 3e15 neq cm-2. In addition, the charge collection properties at different depths inside the silicon bulk have been studied before and after irradiation with the grazing angle technique. The results will be compared to predictions of TCAD simulations. Charge collection and power dissipation properties have been investigated as a function of different operational temperatures.

Presentation materials

Slides

RD50__Santander_NSavic.pdf