Speaker
Francisco Rogelio Palomo Pinto
(Universidad de Sevilla (ES))
Description
We will present our results with TCAD Simulations of three different 3D Devices (ROC4Sense, Fermilab, PSI46). We have I-V, C-V and MIP simulations before and after irradiation up to 2e15 n_eq/cm2. Also include will be a glimpse of our present effort for LGAD device simulations on MIP hit.
Summary
TCAD Simulations (IV, CV, MIP, Irradiated (IV, CV, MIP)) of 3D Detectors
Author
Francisco Rogelio Palomo Pinto
(Universidad de Sevilla (ES))
Co-author
Salvador Hidalgo Villena
(Instituto de Microelectronica de Barcelona (ES))
