22–24 Jun 2015
Santander
Europe/Zurich timezone

Analysis of electron mobility dependence on electron and neutron irradiation in silicon

22 Jun 2015, 10:20
20m
Santander

Santander

Standard (20 min including discussion) Defect and Material Characterization

Speaker

Juozas Vaitkus (Vilnius University)

Description

Irradiation by electrons causes rather small decrease of electron mobility, only at high fluence the tendency to appear of microinhomogeneities appear. The electron mobility decreases up to twice in the neutron irradiated up to fluence 1e16 cm-2. An origin of electron mobility change investigated by analyze of its temperature dependence. A possible fit to experimental data was found if the scattering on phonons, point defects, clusters and dipoles were includded in the consideration. A desity functional method was used to analyze the electron charge distribution insice the cluster, and an existence of the dipole properties was observed.

Author

Juozas Vaitkus (Vilnius University)

Co-authors

Dr Algirdas Mekys (Vilnius University, Institute of Applied Research) Dr Ernestas Zasinas (Vilnius University, Institute of Applied Research) Dr Jurgis Storasta (Vilnius University, Institute of Applied Research) Mr Vytautas Rumbauskas (Vilnius University, Institute of Applied Research)

Presentation materials