Speaker
Igor Mandic
(Jozef Stefan Institute (SI))
Description
The charge collection mechanism in HVCMOS detectors produced by AMS was studied with Edge-TCT and by measuring signals from minimum ionizing particles before and after neutron irradiation with up to 5e15 n/cm2. The sensors were produced for investigation of HVCMOS technology for pixel and strip detectors for the experiments at HL-LHC. In reverse biased HVCMOS sensors studied in this work depleted layer is formed in relatively low resistivity p-type silicon. It was found that the change of depletion thickness with neutron fluence can be explained by initial acceptor removal process. Because of this effect charge collected after a MIP passage with irradiated sensor can significantly exceed the charge collected before irradiation in certain fluence range.
Author
Igor Mandic
(Jozef Stefan Institute (SI))
