Speaker
Esa Tuovinen
(Helsinki Institute of Physics (FI))
Description
Atomic layer deposition (ALD) is well-established and reliable method for depositing thin film layers. Earlier we have demonstrated the use of ALD alumina (Al2O3) layers in the passivation of p-type silicon sensors. With alumina passivation we can leave out p-stop and p-spray structures and, thus, simplify the sensor manufacturing process. In the sensors used in the future upgrades of LHC experiments, the pixel size will be considerably smaller than in the current sensors. As a consequence, the small pixel size makes the realization of punch-through biasing structures very difficult. We have studied the use of ALD thin films as resistor material for the future pixel sensor applications. We will present the first results of Titanium nitride (TiN) thin films grown by plasma enhanced atomic layer deposition (PEALD). This work has been done in collaboration with University of Helsinki, Department of Inorganic Chemistry and Micronova Centre for Micro and Nanofabrication.
Authors
Esa Tuovinen
(Helsinki Institute of Physics (FI))
Jennifer Ott
(Helsinki Institute of Physics (FI))
Co-authors
Aneliya Karadzhinova
(Helsinki Institute of Physics)
Eija Tuominen
(Helsinki Institute of Physics (FI))
Jaakko Haerkoenen
(Helsinki Institute of Physics (FI))
Jaakko Niinistö
(University of Helsinki)
Maarit Kariniemi
(University of Helsinki)
Mikko Ritala
(University of Helsinki)
Panja Luukka
(Helsinki Institute of Physics (FI))
Tatyana Arsenovich
(Helsinki Institute of Physics (FI))
Timo Hannu Tapani Peltola
(Helsinki Institute of Physics (FI))
