Speaker
Marcela Mikestikova
(Acad. of Sciences of the Czech Rep. (CZ))
Description
Surface properties of ATLAS12 n-on-p silicon sensors developed for the upgrade of the strip tracker of the ATLAS experiment were evaluated before and after irradiation. Different types of end-cap and barrel mini sensors were irradiated by gamma and protons at different irradiation sites. Influence of different sensor geometries, wafer resistivities and types of PTP structures on sensor stability and inter-strip properties was studied up to fluence 1E16 neq/cm2.
Summary
It was verified that different geometries of end-cap and barrel sensors do not influence their stability; the sensors should provide acceptable strip isolation up to proton fluence 3E15 neq/cm^2.
Author
Marcela Mikestikova
(Acad. of Sciences of the Czech Rep. (CZ))
Co-authors
Jan Stastny
(Acad. of Sciences of the Czech Rep. (CZ))
Zdenek Kotek
(Acad. of Sciences of the Czech Rep. (CZ))