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22–24 Jun 2015
Santander
Europe/Zurich timezone

Update on Surface Studies of n-on-p Silicon Strip Sensors after irradiation to HL-LHC fluences: Prague status

23 Jun 2015, 16:50
20m
Santander

Santander

Standard (20 min including discussion) Test beams and lab tests

Speaker

Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))

Description

Surface properties of ATLAS12 n-on-p silicon sensors developed for the upgrade of the strip tracker of the ATLAS experiment were evaluated before and after irradiation. Different types of end-cap and barrel mini sensors were irradiated by gamma and protons at different irradiation sites. Influence of different sensor geometries, wafer resistivities and types of PTP structures on sensor stability and inter-strip properties was studied up to fluence 1E16 neq/cm2.

Summary

It was verified that different geometries of end-cap and barrel sensors do not influence their stability; the sensors should provide acceptable strip isolation up to proton fluence 3E15 neq/cm^2.

Author

Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))

Co-authors

Jan Stastny (Acad. of Sciences of the Czech Rep. (CZ)) Zdenek Kotek (Acad. of Sciences of the Czech Rep. (CZ))

Presentation materials