22–24 Jun 2015
Santander
Europe/Zurich timezone

Studies of initial acceptor removal in p-type silicon

22 Jun 2015, 11:50
20m
Santander

Santander

Standard (20 min including discussion) Defect and Material Characterization

Speaker

Gregor Kramberger (Jozef Stefan Institute (SI))

Description

The studies of initial acceptor removal in high resistivity p-type silicon detectors are scarce, mainly due to minor impact on operation of standard p-type detectors at high fluences expected at HL-LHC. On the other hand initial acceptor removal is of prime importance for radiation hardness of new detector technologies such as Low Gain Amplification Detectors and HV-CMOS sensors, where the doping levels are up to several orders of magnitude higher than in standard p-type sensors. In this work the impact of acceptor removal in different detector structures will be reviewed after neutron and charged hadrons irradiations. The initial acceptor removal rate was found to depend on the concetration and it is faster for charged hadrons than neutrons. The removal constants for different material resistivities ranging from ~1 Ohm cm to >10 kOhm cm will be presented. Possible reasons for such behavior will be investigated with means to mitigate or enhance the effect.

Author

Gregor Kramberger (Jozef Stefan Institute (SI))

Co-authors

Igor Mandic (Jozef Stefan Institute (SI)) Marko Mikuz (Jozef Stefan Institute (SI)) Marko Zavrtanik (Jozef Stefan Institute (SI)) Vladimir Cindro (Jozef Stefan Institute (SI))

Presentation materials