Speaker
Vagelis Gkougkousis
(Laboratoire de l'Accelerateur Lineaire (FR))
Description
Trough SiMS measurements, the evolution of the doping profile is been studied for irradiated NinN samples at fluences of 10e15neq/cm2, while the transient current technique is used on diodes of the same implantation profile n order to evaluate the electrical characteristics evolution as a function of the received dose. Comparison and conclusions are established with the non-irradiated case both for the profile evolution and the intrinsic characteristics of the samples. A SiMS vs process simulation approach is used to model and control the new LGAD production in an attempt to understand post irradiation behavior and electrical characteristic.
Author
Vagelis Gkougkousis
(Laboratoire de l'Accelerateur Lineaire (FR))
Co-authors
Abdenour Lounis
(Laboratoire de l'Accelerateur Lineaire (FR))
Clara Nellist
(LAL-Orsay (FR))
