26th RD50 Workshop (Santander)

Session

Simulations

24 Jun 2015, 10:50

Santander

Conveners

Simulations: TCAD

• Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))

25. Status of 3D Detectors TCAD Simulations

Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))

24/06/2015, 11:20

Standard (20 min including discussion)

We will present our results with TCAD Simulations of three different 3D Devices (ROC4Sense, Fermilab, PSI46). We have I-V, C-V and MIP simulations before and after irradiation up to 2e15 n_eq/cm2. Also include will be a glimpse of our present effort for LGAD device simulations on MIP hit.

22. Signal formation in segmented Si planar detectors: TCAD simulated effect of SiO2 passivation layer

Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))

24/06/2015, 11:40

Standard (20 min including discussion)

Measurements have shown a reversal of the pulse polarity in the detector response to short-range charge injection [V. Eremin et al., NIM A 500 (2003) & E. Verbitskaya et al., IEEE TNS 52 (2005) NO. 5]. Since the measured negative signal is about 30–60% of the peak positive signal, the effect strongly reduces the CCE even in non-irradiated detectors. For further investigation of the...

36. Discussion on HVCMOS and discussion on Simulations

Gianluigi Casse (University of Liverpool (GB)), Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))

24/06/2015, 12:00