Conveners
Defect and Material Characterization
- Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
Mr
Rodrigo Martínez-Val Peñalosa
(UIMP - Vicerrector de Innovación y desarrollo de proyectos)
22/06/2015, 10:00
Ivan Vila Alvarez
(Universidad de Cantabria (ES)),
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
22/06/2015, 10:10
Juozas Vaitkus
(Vilnius University)
22/06/2015, 10:20
Standard (20 min including discussion)
Irradiation by electrons causes rather small decrease of electron mobility, only at high fluence the tendency to appear of microinhomogeneities appear. The electron mobility decreases up to twice in the neutron irradiated up to fluence 1e16 cm-2. An origin of electron mobility change investigated by analyze of its temperature dependence. A possible fit to experimental data was found if the...
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
22/06/2015, 10:40
Standard (20 min including discussion)
The study of high resistivity n-type silicon diodes irradiated with electrons of energies ranging from 1.5 MeV to 27 MeV have enabled us to scan the generation, time evolution and generation rates of point defects and small defect clusters having a direct impact on the device performance over a large irradiation fluence range. It is shown that this offers the unique opportunity to follow the...
Juozas Vaitkus
(Vilnius University)
22/06/2015, 11:30
Standard (20 min including discussion)
High energy particle irradiation created cluster defect model is based on the particle bombardment process scenario. The incident particle strikes the crystal lattice at the point of interaction and initiate the movement of lattice ions along with itself. The moving group of ions leave the vacancy region behind itself and further destroy the lattice structure causing other ions to leave their...
Gregor Kramberger
(Jozef Stefan Institute (SI))
22/06/2015, 11:50
Standard (20 min including discussion)
The studies of initial acceptor removal in high resistivity
p-type silicon detectors are scarce, mainly due to minor impact on operation of standard p-type detectors at high fluences expected at HL-LHC.
On the other hand initial acceptor removal is of prime importance for radiation
hardness of new detector technologies such as Low Gain Amplification
Detectors and HV-CMOS sensors,...
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
22/06/2015, 12:10
