Conveners
LGAD
- Salvador Hidalgo Villena (Instituto de Microelectronica de Barcelona (ES))
Giulio Pellegrini
(Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
23/06/2015, 09:00
Standard (20 min including discussion)
I will report the status of the RD50 projects for LGAD and 3D detectors.
Dr
Salvador Hidalgo
(Centro Nacional de Microelectronica (IMB-CNM-CSIC))
23/06/2015, 09:20
Standard (20 min including discussion)
We will present the first technological developments at CNM to fabricate a new p-on-p position-sensitive-detector with low signal amplification useful as well for timing applications. This device is based on a double-sided LGAD with pad-like multiplication structure in the back-side and ohmic read out in the front side. It is has been named “inverted” LGAD (iLGAD).
Christian Gallrapp
(CERN)
23/06/2015, 09:40
Standard (20 min including discussion)
Red and IR LASER TCT measurements have been performed on LGAD samples fabricated in the Run7062. The study focuses on charge collection and gain properties before and after irradiation with neutron and protons up to fluences of 1E16$n_{eq}cm^{-2}$. A second focus is the analysis of inhomogeneous behavior observed during TCT surface scans with front and back side exposure. In unirradiated LGAD...
Vagelis Gkougkousis
(Laboratoire de l'Accelerateur Lineaire (FR))
23/06/2015, 10:00
Standard (20 min including discussion)
Trough SiMS measurements, the evolution of the doping profile is been studied for irradiated NinN samples at fluences of 10e15neq/cm2, while the transient current technique is used on diodes of the same implantation profile n order to evaluate the electrical characteristics evolution as a function of the received dose. Comparison and conclusions are established with the non-irradiated case...
Ivan Vila Alvarez
(Universidad de Cantabria (ES))
23/06/2015, 10:20
After the first proof-of-concept of the TCT technique based on the Two-Photon-Absortion process using a 1300nm femtosecond laser on non-irradiated silicon diodes. we aim to complete the feasibility study of the TPA-TCT technique on irradiated sensors. As it is well known, irradiation creates localized deep energy levels (DL) inside the semiconductor’s forbidden gap between the conduction and...
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
23/06/2015, 10:40
Standard (20 min including discussion)
Thin Low-Gain Avalanche detectors are expected to have very good time resolution.
We analyze data from a CERN beam test and show the requirements for truly ultra-fast silicon detectors (UFSD).
Marko Zavrtanik
(Jozef Stefan Institute (SI))
23/06/2015, 11:20
Standard (20 min including discussion)
A presentation of small portable TCT will ge given. The system can be used as a tool for material studies or for educational purposes.
Nicolo Cartiglia
(Universita e INFN Torino (IT))
23/06/2015, 11:30
Standard (20 min including discussion)
In this talk I will present the most recent timing measurements performed in the last CNM LGAD production using the laser system in Torino.
