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VCI2016 - The 14th Vienna Conference on Instrumentation

15–19 Feb 2016
Vienna University of Technology
Europe/Vienna timezone

Session

SiPM

16 Feb 2016, 16:30
Vienna University of Technology

Vienna University of Technology

Gusshausstraße 27-29, 1040 Wien

Conveners

SiPM

  • Hiroyasu TAJIMA (SLAC)

Presentation materials

There are no materials yet.

  1. 294. A novel Silicon Photomultiplier with bulk integrated quench resistors - utilization in optical detection and tracking applications for particle physics
    Mr Stefan Petrovics (Semiconductor Laboratory of the Max-Planck Society)
    16/02/2016, 16:30
    Semiconductor Detectors
    Talk
    Silicon Photomultipliers (SiPMs) are a promising candidate for replacing conventional photomultiplier tubes in many applications, thanks to ongoing developments and advances in their technology. A drawback of conventional SiPMs is their limited fill factor caused by the need for a high ohmic polysilicon quench resistor and its metal lines on the surface of the devices, which in turn limits the...
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  2. 331. Performance of the latest prototypes of NUV-HD Silicon Photomultipliers
    Gaetano Zappalà (University of Trento)
    16/02/2016, 16:55
    Semiconductor Detectors
    Talk
    In this work, we will present the latest Silicon photomultiplier technology (SiPM), developed in Fondazione Bruno Kessler, designed to detect UV and blue light and named NUV-HD. With respect to the original NUV technology, shown at last VCI, the High-Density (HD) one has the same electrical field profile but a novel layout with a lower dead border area and the introduction of trenches between...
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  3. 326. Improving the Time Resolution in Cherenkov TOF PET with SiPMs
    Rok Dolenec (Institut "Jožef Stefan")
    16/02/2016, 17:20
    Semiconductor Detectors
    Talk
    Silicon photomultipliers (SiPMs) were examined as photodetectors in Cherenkov time-of-flight positron emission tomography (TOF PET). The time-of-flight resolution and the detection efficiency of several devices by different manufacturers were measured in TOF PET setup. Effects which degrade the time resolution and the methods to correct them were studied in more detail with a picosecond laser setup.
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  4. 251. Study of the breakdown voltage of SiPMs
    Prof. Robert Klanner (University of Hamburg)
    16/02/2016, 17:45
    Semiconductor Detectors
    Talk
    The breakdown behaviour of prototype SiPMs (Silicon Photomultiplier) with pixel sizes of 15×15, 25×25 and 50×50 μm^2 manufactured by KETEK has been investigated. The I-V (current-voltage) characteristics and the PA (pulse-area) spectra have been measured as a function of bias voltage in dark conditions, as well as with the SiPM illuminated with an LED with a wavelength of 470 nm. The...
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