7th RD50 Workshop

Session

Pad Detector Characterization (PDC)

14 Nov 2005, 09:15

CERN

7. A simple model for the equivalent circuit of heavily irradiated Si diodes in standard CV measurements

Alexandre Chilingarov (Lancaster University, UK)

14/11/2005, 09:15

D.Campbell, A.Chilingarov, T.Sloan
Lancaster University, UK

4. Comparison of full depletion voltage values extracted from C-V, I-V characteristics and charge collection measurements for a highly irradiated epi-detector

Eckhart Fretwurst (University of Hamburg)

14/11/2005, 09:35

E. Fretwurst, F. Hönniger, G. Lindström
Institut for Experimental Physics, University of Hamburg

1. Radiation Tolerance of EPI-Detectors - Recent results and future plans

Gunnar Lindstroem (Institut)

14/11/2005, 09:55

G. Lindstroem, I. Dolenc, E. Fretwurst, F. Hoenniger, G. Kramberger, M. Moll, E. Nossarzewska, I. Pintilie, R. Röder
Inst. of Exp. Phys., Univ of Hamburg; Jozef Stefan Inst., Univ. of Ljubljana; CERN; ITME Warsaw; NIMP Bucharest; CiS Erfurt

8. Room temperature annealing of epi-Si detectors

Irena Dolenc (Jozef Stefan Institute)

14/11/2005, 10:15

I. Dolenc, V. Cindro, E. Fretwurst, G. Kramberger, G. Lindstroem, I. Mandic, M. Mikuz
Jozef Stefan Institute

6. Coffee Break

14/11/2005, 10:35

3. Radiation hardness of pad detectors manufactured on different silicon substrates

Vladimir Khomenkov (INFN)

14/11/2005, 11:05

V. Khomenkov(1), A. Litovchenko(1), M. Boscardin(2), V. Cindro(3), P. Litovchenko(4), V. Radicci(5), SMART Collaboration(6)
(1)INFN Padova, Italy; (2)ITC-irst, Trento, Italy; (3)Jozef Stefan Institute, Ljubljana, Slovenia; (4)KINR, Kiev, Ukraine; (5)INFN Bari, Italy; (6)Bari, Firenze, Padova, Perugia, Pisa, Trento.

5. Discussion: Pad Detector Characterization

Gregor Kramberger and Eckhart Fretwurst

14/11/2005, 11:25

Discussion on Pad Detector Characterization with special focus on epitaxial silicon. CZ/MCZ will be discussed at the end of the DE session.

2. Lunch Break

14/11/2005, 11:55