27 August 2017 to 1 September 2017
RAI Congress Center, Amsterdam, The Netherlands
Europe/Amsterdam timezone

2G HTS Magnet Stability Improvement via V2O3 Material and perforated HTS Wire

30 Aug 2017, 13:15
1h 45m
Posters Area

Posters Area

Poster Presentation of 1h45m G3 - Stability of Conductors and Coils Wed-Af-Po3.11


Dr Hyung-Wook Kim (Korea Electrotechnology Research Institute)


In this paper, we propose an improved wire structure that easily causes current bypass when the V2O3 material is applied turn-to-turn in 2G HTS no-insulation coils. A characteristic of the V2O3 material is that when a quench causes the coil temperature to rise the turn-to-turn resistance is lowered and current is bypassed. However, due to the high material resistance of the original 2G HTS wire, the turn-to-turn resistance is large and the resulting amount of bypassed current is small. Therefore, in order to reduce the turn-to-turn resistance of the original 2G HTS coil, a short sample test and a FEM analysis were performed of the perforated wire. We also applied the proposed method to the coil and verified its validity through experimental results.

Submitters Country Republic of korea

Primary author

Dr Hyung-Wook Kim (Korea Electrotechnology Research Institute)


Dr Seog-Whan Kim (Korea Electrotechnology Research Institute) Dr Rock-Kil Ko (Korea Electrotechnology Research Institute) Dr Dong-Woo Ha (Korea Electrotechnology Research Institute) Young-Sik Jo (Korea Electrotechnology Research Institute)

Presentation Materials

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