Speaker
Natascha Savic
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
Description
New productions of thin n-in-p pixel sensors designed at MPP will be presented.
Sensors in the thickness range between 50 and 150 um have been produced at ADVACAM
on SOI wafers with slim or active edges. Evaluation assemblies have been measured by means of radioactive source scans and beam tests.
The performance after irradiation in terms of hit efficiency of different pixel cell designs will be discussed.
The main focus is the optimization of the punch-through and bias rails to limit
the loss of efficiency caused by these structures at high levels of irradiation.
The results have been used in the design of the sensors for the new RD53 read-out chips
implemented in the coming productions at MPG-HLL and CIS.
Measurements of charge collection at different depths in the pixel sensor bulk have been
obtained with the grazing angle technique for n-in-p pixel sensors.
This analysis also allows for the determination of hit efficiency with small
pixel pitches in the high pseudo-rapidity range of the new pixel systems at HL-LHC.
Primary author
Natascha Savic
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
