Speaker
Andreas Gisen
(Technische Universitaet Dortmund (DE))
Description
The innermost tracking detector of the ATLAS experiment consists of planar n-in-n pixel sensors. Also the newly installed insertable b-layer (IBL) consists of pixel sensors but with a revised design layout and an improved front-end electronics. The envisaged radiation dose in the run II data taking period of the innermost sensors will be a few $10^{15} \text{n}_{\text{eq}}\text{cm}^{-2}$. Irradiation doses well above $10^{16} \text{n}_{\text{eq}}\text{cm}^{-2}$ are considered for innermost pixel detector layers in future collider and detector upgrades like the high luminosity LHC (HL-LHC).
This contribution presents the results of a systematic study of power dissipation, which has been performed on several n-in-n single chip sensors, irradiated to fluences up to $2 \times 10^{16} \text{n}_{\text{eq}}\text{cm}^{-2}$ as well as on all main structures of a non-irradiated IBL prototype wafer. Measurement parameters include variations of sensor bias voltages, operation temperatures, bulk thicknesses and irradiation fluences.
Primary authors
Andreas Gisen
(Technische Universitaet Dortmund (DE))
Reiner Klingenberg
(Technische Universitaet Dortmund (DE))
