Dec 2 – 4, 2015
CERN
Europe/Zurich timezone

IV-characterization of silicon sensors irradiated up to 2E16neq/cm^2

Dec 3, 2015, 9:00 AM
20m
6/2-024 - BE Auditorium Meyrin (CERN)

6/2-024 - BE Auditorium Meyrin

CERN

6-2-024
114
Show room on map

Speaker

Sven Wonsak (University of Liverpool (GB))

Description

Miniature silicon strip detectors (~1x1cm) with different thicknesses (50, 100, 150 and 300 μm) from Hamamatsu K.K. and Micron Semiconductor Ltd. were irradiated at Birmingham and Ljubljana with doses up to 2E16 neq/cm^2. IV measurements were performed at different temperatures for the determination of the effective energy Eeff and the current related damage rate α directly after irradiation and after room temperature annealing (10 days and 30 days). The results of these measurements performed at Liverpool will be presented in this talk. A second set of sensors of the same type and irradiation campaign have been measured in Freiburg with a different set-up. These results will be shown by Moritz Wiehe at this workshop.

Author

Sven Wonsak (University of Liverpool (GB))

Co-authors

Gianluigi Casse (University of Liverpool (GB)) Ilya Tsurin (University of Liverpool (GB)) Michael Wormald (University of Liverpool (GB)) Moritz Wiehe (Albert-Ludwigs-Universitaet Freiburg (DE)) Paul Dervan (University of Liverpool (GB)) Susanne Kuehn (Albert-Ludwigs-Universitaet Freiburg (DE)) Tony Affolder (University of Liverpool (GB)) Ulrich Parzefall (Albert-Ludwigs-Universitaet Freiburg (DE))

Presentation materials