Dec 2 – 4, 2015
CERN
Europe/Zurich timezone

Simulations of HV-CMOS

Dec 2, 2015, 3:00 PM
20m
6/2-024 - BE Auditorium Meyrin (CERN)

6/2-024 - BE Auditorium Meyrin

CERN

6-2-024
114
Show room on map
Standard (20 min including discussion) CMOS sensors and Sensor Producers

Speaker

Francisco Rogelio Palomo Pinto (Universidad de Cantabria (ES))

Description

Where we present some TCAD simulatinos on HV-CMOS 350 nm AMS, in order to assist the comparison with measurements.

Summary

Where we present some TCAD simulatinos on HV-CMOS 350 nm AMS, in order to assist the comparison with measurements.

Author

Francisco Rogelio Palomo Pinto (Universidad de Cantabria (ES))

Co-authors

Marcos Fernandez Garcia (Universidad de Cantabria (ES)) Michael Moll (CERN) Salvador Hidalgo Villena (Instituto de Microelectronica de Barcelona (ES))

Presentation materials