27th RD50 Workshop (CERN)

Radiation hardness studies of neutron and proton irradiated CMOS sensors fabricated in the ams H18 high voltage process

2 Dec 2015, 14:20

20m

6/2-024 - BE Auditorium Meyrin (CERN)

Standard (20 min including discussion) CMOS sensors and Sensor Producers

Speaker

Marcos Fernandez Garcia (Universidad de Cantabria (ES))

Description

High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10$\Omega\cdot\mathrm{cm}$ were irradiated with 24 GeV/c protons up to a fluence of 7$\times$10$^{15}$ n$_{eq}$/cm$^2$ and thermal neutrons up to a fluence of 2$\times$10$^{16}$ n$_{eq}$/cm$^2$. The detectors were characterized using edge-TCT. Both, the collected charge and the depletion depth increased after irradiation, showing a benefitial effect of irradiation on low resistivity silicon.

Presentation materials

MarcosFernandez_27thRD50-CERN_v0.pdf