Speaker
Vagelis Gkougkousis
(Laboratoire de l'Accelerateur Lineaire (FR))
Description
In the context of the latest CNM LGAD production run, SiMS measurements and simulations are presented for the and nntypr implants. An additional study on irradiated p-implanted doping profiles is performed with fuences of 10^15neq/cm^2
Author
Vagelis Gkougkousis
(Laboratoire de l'Accelerateur Lineaire (FR))
Co-authors
Abdenour Lounis
(Laboratoire de l'Accelerateur Lineaire (FR))
Clara Nellist
(LAL-Orsay (FR))