Sven Wonsak
(University of Liverpool (GB))
03/12/2015, 09:00
Miniature silicon strip detectors (~1x1cm) with different thicknesses (50, 100, 150 and 300 μm) from Hamamatsu K.K. and Micron Semiconductor Ltd. were irradiated at Birmingham and Ljubljana with doses up to 2E16 neq/cm^2. IV measurements were performed at different temperatures for the determination of the effective energy Eeff and the current related damage rate α directly after irradiation...
Moritz Wiehe
(Albert-Luwdigs-University Freiburg)
03/12/2015, 09:20
The reverse current of irradiated silicon sensors has a strong influence on the signal-to-noise-ratio of a detector and leads to significant heat dissipation within the detector. Thus knowledge of the expected reverse current is crucial for detector design and operation.
The dependence of the reverse current on temperature and irradiation fluence is parameterized by the effective bandgap Eeff...
Marko Mikuz
(Jozef Stefan Institute (SI))
03/12/2015, 09:40
Electric field in silicon irradiated with neutrons up to 1e17 n_eq/cm^2 and PS protons up to 3e16 p/cm^2 was investigated by edge-TCT. Methods for absolute determination of electric field were developed and electric field profiles in the silicon bulk obtained. From the v(E) dependence mobility degradation with fluence was extracted. A 1/sqrt(Phi) dependence of mobility on fluence was obseved...
Christian Scharf
(Hamburg University (DE))
03/12/2015, 10:00
For highly irradiated silicon sensors the electric field under reverse bias takes the shape of a double junction with high field strength near the implants and a region of low field strength in between. For this condition it is not trivial to disentangle the electric field, (de-)trapping of charge carriers, and the drift velocity all of which are a function of the irradiation and the position...
Gianluigi Casse
(University of Liverpool (GB))
03/12/2015, 10:20
The development of silicon detectors tolerant to extreme fluences for future high energy and high luminosity hadron colliders (like the upgrade of the present Large Hadron Collider to high luminosity at CERN) is demanded not only for instrumenting the innermost layers (where pixel sensors will be deployed) but also for particle flow calorimetry. The anticipated fluence levels range from 2E16...
Eckhart Fretwurst
(II. Institut fuer Experimentalphysik)
03/12/2015, 10:40
Dr
Salvador Hidalgo
(Centro Nacional de Microelectronica (IMB-CNM-CSIC))
03/12/2015, 11:20
Standard (20 min including discussion)
We will present the last technological developments at CNM on LGAD and iLGAD detectors. The last electrical performances for pad and strip LGADs will also be presented, showing that the fabricated LGAD detectors have a voltage capability higher than 1000 V with leakage currents in the 20 nA/cm2 range, and a linear gain in the typical operating reverse voltage values (200 to 800 V) in the range...
Isidro Mateu Suau
(Centro de Investigaciones Energ. Medioambientales y Tecn. - (ES)
03/12/2015, 11:50
Sofia Otero Ugobono
(Universidade de Santiago de Compostela (ES))
03/12/2015, 12:00
Standard (20 min including discussion)
Results from the study of LGADs from CNM Run 7859 will be presented. TCT+, CV/IV and Sr90 source measurements were performed before irradiation. Some of these sensors have been subjected to proton irradiation at CERN. The fluences to which these were exposed are 1E12, 1E13, 1E14 and 1E15 neq/cm^2. CV/IV curves of the irradiated samples were obtained and will be presented together with an...
Dr
Vladimir Eremin
(Ioffe Institute, St. Petersburg)
03/12/2015, 12:20
Standard (20 min including discussion)
The negative feedback in silicon heavily irradiated detectors is a basic mechanism which governs the detector performance [V. Eremin, et al., NIM A 658 (2011) 145]. The talk presents a comparative study of the mechanism in P+-I-N+ and Low Gain Avalanche Diodes (LGAD) utilizing the classic structure of avalanche photodiodes performed in the fluence range up to 1x10^15 neq/cm2. The analytical...
Nicolo Cartiglia
(Universita e INFN Torino (IT))
03/12/2015, 12:40
Standard (20 min including discussion)
In this contribution I will report on the the timing resolutions of 300-micron thick LGAD sensors from CNM obtained at testbeams and compare the results with prediction from simulations.
I will also illustrate the timing capabilities of future thin LGAD production and report on potential use of LGADs at LHC.
Hartmut Sadrozinski
(University of California,Santa Cruz (US))
03/12/2015, 13:00
Standard (20 min including discussion)
For the use as Ultra-Fast Silicon Detectors, we are planning to use thin (50um) LGAD.
We will report on our measurements and simulations on thin epi sensors and the issues a fast readout will bring
