Giulio Pellegrini
(Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
03/12/2015, 14:30
Standard (20 min including discussion)
I will do a short summary on the status of the RD50 funding projects related to LGAD detectors.
Gregor Kramberger
(Jozef Stefan Institute (SI))
03/12/2015, 15:10
Standard (20 min including discussion)
A full 3D package for charge collection simulations in semiconductor detectors has been developed within the ROOT framework. It solves Poisson and Laplace equations for a given space charge in different materials. The simulation of induced current takes into account all relevant physics processes such as drift, diffusion and impact ionization and trapping.The basics/fundamentals of the...
Gregor Kramberger
(Jozef Stefan Institute (SI))
03/12/2015, 15:30
Standard (20 min including discussion)
Simulation tools designed for charge collection studies were developed by different groups within rd50. These tools solve Poisson equation for a given space charge (rather than calculating it from microscopic defects). Unlike commercial packages they allow for fast simulation of drift and diffusion of generated charges allowing Monte Carlo approach on studies of detector performance. They are...
Joern Schwandt
(Hamburg University (DE))
03/12/2015, 16:20
Standard (20 min including discussion)
For the high luminosity phase of the Large Hadron Collider (HL-LHC) at the expected position of the innermost pixel detector layer of the CMS experiment the estimated equivalent fluence after 3000 fb$^{-1}$ is 2$\cdot$10$^{16}$ neq/cm$^2$, and the IEL (Ionizing Energy Loss) dose in the SiO$_2$ is 5 MGy. The optimization of the pixel sensors and the understanding of their performance as a...
Dr
Elena Verbitskaya
(Ioffe Institute, St. Petersburg)
03/12/2015, 16:40
Standard (20 min including discussion)
The LGAD characteristics are calculated basing on the model of carrier impact ionization in the p+ built-in layer. It is shown that characteristics of the diodes are controlled by negative feedback via trapping of holes arisen due to impact ionization, which reduces the electric field and the signal gain. The dependences of collected charge vs. bias voltage and fluence are obtained and their...
Ranjeet Dalal
(University of Delhi)
03/12/2015, 17:00
Standard (20 min including discussion)
Recently proposed Low Gain Avalanche Detector (LGAD) designs has been subject of increasing interest within Si sensor community. The LGAD devices fabricated by CNM Barcelona have shown promising characteristics before irradiation. But, after hadron irradiation, a significant degradation of gain has been observed in these devices. These results have not been explained by earlier simulations and...
Geetika Jain
(University of Delhi (IN))
03/12/2015, 17:20
Standard (20 min including discussion)
The pixel sensors of the CMS silicon tracker are required to be upgraded to sustain the harsh radiation environment that will be generated during the High Luminosity Large Hadron Collider (HL-LHC) era. To overcome the problem of radiation damage in Si sensors, an R&D effort is being carried out by the Si sensor Device Simulation Group on different designs of pixel sensors through TCAD...
Timo Hannu Tapani Peltola
(Helsinki Institute of Physics (FI))
03/12/2015, 17:40
Standard (20 min including discussion)
The significant advantages of detectors manufactured on p-type silicon material over n-type detectors in the HEP particle tracking applications
have been well documented in the R&D community. In AC-coupled p-type position-sensitive strip detectors, however, the fixed oxide
charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO2 interface. Thus, the...
Gregor Kramberger
(Jozef Stefan Institute (SI)),
Vladimir Eremin
(Ioffe Physical Technical Institute of Russian Academy of Scienc)
03/12/2015, 18:00
