Speaker
Joern Lange
(Hamburg University)
Description
Epitaxial silicon pad diodes of p-type (150 µm, ST material) and n-type (75 µm, 100 µm, 150 µm, both ST and DO) material have been investigated after 24 GeV/c proton irradiation at CERN PS. Time-resolved TCT measurements with 670 nm laser light (front injection) were performed for 150 µm thick diodes and thus the effective trapping time constants for electrons (n-type) and holes (p-type) could be obtained. CCE measurements with 5.8 MeV alpha particles and 670 nm and 1060 nm laser light showed an anomalously high charge collection.
Author
Joern Lange
(Hamburg University)
Co-authors
Eckhart Fretwurst
(Hamburg University)
Gunnar Lindström
(Hamburg University)
Julian Becker
(Hamburg University)
