Speaker
Alexandra Junkes
(Hamburg University)
Description
Isothermal annealing studies were carried out at 80 °C on 75 um thick standard and oxygen enriched Epitaxial (EPI) material, irradiated with 1 MeV neutron fluences of 2E14 n/cm2 and 1E15 n/cm2. Depletion voltage and leakage current were obtained by CV and IV measurements while defect concentrations were measured by means of Thermally Stimulated Current technique (TSC). The microscopic results were used to predict the so called "reverse annealing". Our findings are in good agreement with the macroscopic sensor properties.
Author
Alexandra Junkes
(Hamburg University)
Co-authors
Mrs
Doris Eckstein
(Hamburg University)
Eckhart Fretwurst
(Hamburg University)
Gunnar Lindström
(Hamburg University)
Ioana Pintilie
(NIMP, Bucharest, Romania and Hamburg University)
