Prototype of a 250 µm Pitch 36-Channel Silicon Photo Multiplier Array Using Silicon on Insulator Technology for Photon Counting Computed Tomography

15 Dec 2017, 11:50
20m
Conference Center (Okinawa Institute of Science and Technology Graduate University (OIST))

Conference Center

Okinawa Institute of Science and Technology Graduate University (OIST)

OIST, Onna, Okinawa 904-0495, Japan
ORAL SOI detectors Session16

Speaker

Akihiro Koyama (University of Tokyo)

Description

Photon counting computed tomography (PCCT) based on indirect conversion detectors have taken great interests from its low fabrication cost and easy handling. Recent fine-pitch scintillator array also shows great potentials for spatial resolution enhancement. However, requirements for photo detector are still severe for precise energy and position measurement in PCCT.
In order to achieve both sensitivity and high spatial resolution in photo detector, 250 µm pitch Silicon photomultiplier array using Silicon on Insulator technology (SOI-SiPM) was provided in this study. SiPM, which is operated at over breakdown voltage, provides weak light detection capability with high S/N and fast response derived from internal gain. Back illumination capability of SOI contributes to avoid detection efficiency deterioration derived from quench resistor. As feasibility study, the first prototype of a 36-channel SOI-SiPM array was fabricated and characterized.

Primary authors

Akihiro Koyama (University of Tokyo) Kenji Shimazoe (The University of Tokyo) Prof. Hiroyuki Takahashi (The University of Tokyo) Ryutaro Hamasaki (SOKENDAI) Toru Takeshita (Shinshu University (JP)) Prof. Ikuo Kurachi (HIgh Energy Accelerator Research Organization) Toshinobu Miyoshi (KEK) Isamu Nakamura (Department of Physics) Shunji Kishimoto (KEK) Yasuo Arai (High Energy Accelerator Research Organization (JP))

Presentation materials