Speaker
Description
Application of the Silicon-On-Insulator (SOI) technology [1] to a pixelated detector is expected for the imaging experiments using synchrotron X-rays. The SOI pixel detector is advantageous to make a fine pixel with a low noise, because there is no mechanical bump bonding. Because of the soft X-ray experiments like the surface X-ray scattering (SXS) and diffraction (SXRD) is very important for the surface analysis, we have started to develop a pulse-counting type SOI pixel which is sensitive to X-rays (E > 1 keV). The first test-element-group, CPIXPTEG2, is used for the evaluation experiment using synchrotron X-rays. The CPIXPTEG2 is designed applying the double-SOI technology [2] and its total thickness is made 75 μm for reducing the dispersion of the charges collected inside the sensor. To reduce the thickness of dead layer, the non-melting laser annealing was employed to suppress dopant diffusion during activation.
In this conference, we will introduce the results of the performance tests.
