21-23 November 2016
CERN
Europe/Zurich timezone

New results of measurements with irradiated CMOS detectors in Ljubljana

21 Nov 2016, 10:15
20m
6/2-024 - BE Auditorium Meyrin (CERN)

6/2-024 - BE Auditorium Meyrin

CERN

6-2-024
120
Show room on map

Speaker

Igor Mandic (Jozef Stefan Institute (SI))

Description

New results of E-TCT and Sr90 measurements with CMOS detectors produced on substrates with different resistivities will be presented. With Edge-TCT method the thickness of depleted layer can be estimated and its dependence on irradiation flunece was studied. Collected charge deposited by MIPs from Sr90 source in passive CMOS detectors was measured with external amplifier. The dependence of collected charge on fluence will be presented and compared to E-TCT measurements.

Primary author

Igor Mandic (Jozef Stefan Institute (SI))

Presentation Materials