Speaker
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
Description
First Two Photon edge-TCT measurements of an HVCMOSv3 (ams 180 nm) irradiated with neutrons to a fluence of 7e15 neq/cm2 will be presented. The superior spatial resolution of TPA allows to accurately calculate the depletion width and effective doping concentration of the bulk. We attempt to profile the electric field inside the detector, including its distribution inside the Deep Implant. We compare the results with those obtained from the non-irradiated device, already measured with this technique.
Primary author
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
Co-author
Michael Moll
(CERN)
