We report on the status of the Ultra fast silicon Detector (USFD). UFSD are
silicon detectors based on the Low Gain Avalanche Diodes (LGAD); they LGAD
have internal moderate gain (~10 order of magnitude), they exhibit
fast and large signal and the signal is about 10 larger than the standard
silicon detector. Thanks to their properties they are good candidates
for time applications.
We will concentrate the discussion discuss the results on UFSD and LGAD
developed by the two international center manufacturers: the Institute of
Microelectronics of Barcelona (CNM) and the Fondazione Bruno Kessler of
CNM has produced the first 50μm thin LGAD sensor with thickness = 50μm; in this contribution we focused the attention on sensors products for
the two CERN experiments TOTEM and CT-PPS.
In this presentation we will show the preliminary IV curves of these
detectors as measured in Turin.
FBK has produced many different LGAD structures with thickness = 300μm; we
will show the internal gain measurements performed in Turin and the its
comparison of these measurements with the gain simulated with the simulations carried over by the University of Trento.
We will also present results on the FBK production of LGAD MultiPad structures with readout segmentation either on n-side or on p-side segmentation; the difference
between n-side and p-side LGAD segmentation is the segmented internal gain layer for the first one and the single internal layer for the second one.
In this contribution we will show the preliminary results about the read-out signal for these two different LGAD structure.